Personal profile
Research interests
1. Field Effect Devices
2. Electrochemical Sensor
3. Green Energy
4. 2D Materials
Professional Information
PhD (Chang Gung University, Taiwan)
PostDoc (NTHU, Taiwan, Academia Sinica, Taiwan and Zhejiang University, China)
Awards and recognition:
1. Honorary member of the Phi-Tau-Phi Scholastic Honor Society of the Republic of China (1st June 2013) for excellent academic performance and moral conduct as a Doctoral Scholar at Chang Gung University. [http://www.phitauphi.org.tw/]
2. Selected as a Post-Doctoral Fellow sponsored by the Ministry of Science and Technology (MoST), Taiwan.
3. Four-year, academic performance-based International Student Scholarship, Chang Gung University, Taoyuan, Taiwan.
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Collaborations and top research areas from the last five years
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An electrochemical hypothesis of earthquakes exploring a theoretical link between radiated seismic energy and Pourbaix potential
Das, A. & Bag, S. P., 12-2026, In: Scientific Reports. 16, 1, 8701.Research output: Contribution to journal › Article › peer-review
Open Access -
Advancements in Wearable and Implantable BioMEMS Devices: Transforming Healthcare Through Technology
Abhinav, V., Basu, P., Verma, S. S., Verma, J., Das, A., Kumari, S., Yadav, P. R. & Kumar, V., 05-2025, In: Micromachines. 16, 5, 522.Research output: Contribution to journal › Review article › peer-review
Open Access44 Link opens in a new tab Citations (Scopus) -
Design of Read-Out Circuit for Ion-Sensitive FET Using 45nm CMOS Technology Node
Ankkitha & Das, A., 2025, 2025 Control Instrumentation System Conference, CISCON 2025. Institute of Electrical and Electronics Engineers Inc., (2025 Control Instrumentation System Conference, CISCON 2025).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
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Pristine SiNW Thin-Film Gas Sensors: Poole-Frenkel Transport-Enabled H2S Detection
Abhinav, V., Verma, S. S., Das, A. & Naik, T. R., 2025, (Accepted/In press) In: IEEE Sensors Letters. 10, 2, 2000304.Research output: Contribution to journal › Article › peer-review
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Unveiling the abnormal response behavior of AlGaN-based high electron mobility transistors (HEMTs) under ultraviolet light illumination
Sharma, M., Tsai, C. L., Manjunatha, S. N., Hsieh, Y. L., Das, A., Lee, K. Y., Ko, S. C., Huang, S. F., Chang, L. B. & Wu, M. C., 03-2025, In: Materials Science in Semiconductor Processing. 187, 109134.Research output: Contribution to journal › Article › peer-review
3 Link opens in a new tab Citations (Scopus)