INIS
capacitance
100%
field effect transistors
63%
voltage
63%
ferroelectric materials
61%
power
57%
performance
54%
devices
41%
phase transformations
31%
applications
30%
design
28%
charges
23%
comparative evaluations
22%
thickness
22%
amplification
21%
variations
20%
operation
19%
interfaces
17%
scaling
16%
transistors
16%
doped materials
15%
capacitors
15%
traps
14%
mosfet
13%
values
12%
dielectrics
12%
oxides
12%
length
11%
dynamics
10%
coupling
9%
fins
9%
energy
9%
barriers
7%
heusler alloys
7%
polarization
7%
junctions
7%
temperature range 0273-0400 k
7%
magnetic tunnel junctions
7%
curie temperature
7%
radiowave radiation
7%
implementation
7%
multiplexers
7%
hafnium oxides
7%
margins
7%
noise
7%
leakage current
7%
simulation
6%
silicon
6%
increasing
6%
gain
5%
supply
5%
Material Science
Capacitance
82%
Field Effect Transistors
71%
Ferroelectric Material
51%
Heterojunction
39%
Devices
36%
Material
30%
Oxide
20%
Transistor
20%
Electronic Circuit
17%
Capacitor
14%
Dielectric Material
13%
Metal-Oxide-Semiconductor Field-Effect Transistor
12%
Inverter
9%
Electron Mobility
7%
Silicon on Insulator
7%
Temperature
7%
Curie Temperature
7%
Gallium Nitride
7%
Hafnium
7%
Power Electronics
7%
Tunneling Magnetoresistance
6%
Anisotropy
5%
Physics
Performance
44%
Capacitance
33%
Ferroelectricity
32%
Frequencies
24%
Electric Potential
18%
Variations
17%
Tunnel
15%
Parameter
14%
Independent Variables
13%
Dielectrics
9%
Utilization
9%
Transistor
9%
Distortion
7%
Surface Properties
7%
Heusler Compound
7%
Phase Transition
7%
Heterojunctions
7%
Tunnel Junction
7%
Gallium
7%
Threshold Voltage
7%
Permittivity
7%
Hafnium
7%
Silicon
6%
Simulation
5%
Circuits
5%
Work Functions
5%
Value
5%