INIS
doped materials
100%
defects
70%
temperature range 0273-0400 k
57%
investigations
51%
energy
50%
dielectrics
49%
spectroscopy
44%
values
43%
applications
43%
polycrystals
40%
temperature dependence
40%
oxygen
40%
vacancies
39%
optical properties
36%
oxides
35%
copper oxides
34%
x-ray diffraction
30%
thin films
30%
correlations
29%
origin
29%
density functional method
29%
films
28%
charges
27%
photoluminescence
27%
absorption spectroscopy
26%
probes
25%
losses
24%
emission
24%
absorption
23%
zinc oxides
23%
spin
22%
transition metals
22%
peaks
22%
devices
22%
irradiation
21%
solids
20%
concentration
20%
phonons
20%
stability
20%
relaxation
19%
magnetoresistance
19%
simulation
18%
coupling
18%
variations
18%
phase transformations
18%
synthesis
18%
nanostructures
17%
semiconductor materials
17%
boron nitrides
17%
strains
17%
Material Science
Density
64%
Optical Property
52%
Dielectric Material
50%
Absorption Spectroscopy
42%
Diffuse Reflectance Spectroscopy
42%
Photoluminescence
39%
Oxide Compound
39%
X-Ray Diffraction
37%
Absorption Spectra
34%
Film
31%
Thin Films
31%
Electronic Property
30%
ZnO
23%
Heterojunction
23%
Magnetoresistance
23%
Ferromagnetism
21%
Photovoltaics
19%
Energy Levels
19%
Raman Spectroscopy
19%
Lanthanum
18%
Magnetic Property
18%
Lineshape
18%
Boron Nitride
17%
Polycrystal
17%
Oxygen Vacancy
17%
Permittivity
17%
Solid-State Reaction Route
15%
Physical Property
15%
Powder X-Ray Diffraction
14%
Point Defect
13%
Dielectric Spectroscopy
11%
Linewidth
11%
Rietveld Refinement
11%
Luminescence
11%
Thermoelectrics
11%
Lattice Constant
11%
Transition Metal
11%
Nanoribbon
11%
Ion Bombardment
11%
Optical Spectroscopy
11%
Transition Metal Dichalcogenides
10%
X-Ray Absorption near Edge Structure
9%
Phase Composition
9%
Thermal Conductivity
9%
Titanium Dioxide
8%
Doping (Additives)
8%
Metastability
8%
Semiconducting Material
8%
Capacitance
8%
Oxide Semiconductor
8%