170 MHz GBW, two stage CMOS operational amplifier with high slew rate using 180 nm technology

Guruprasad; Kumara Shama

doi:10.1109/INDICON.2015.7443521

170 MHz GBW, two stage CMOS operational amplifier with high slew rate using 180 nm technology

Guruprasad
, Kumara Shama

Manipal Institute of Technology, Manipal

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Operational amplifiers (Op-amp) are vital components of any analog IC, improving its performance has a significant effect on the entire design. Among different approaches to realize an Op-amp, a Two stage i.e differential amplifier followed by common source amplifier is simple, elegant and occupies less space. The proposed paper presents design of a Two Stage CMOS Operational amplifier, which operates at ±1.8V power supply using 180 nm CMOS technology. The unity-gain bandwidth of the amplifier is 170 MHz. The Op-amp is internally frequency compensated using a miller capacitor for better stability and phase lag created by the zero is resolved by adding a resistor in series with the miller capacitor. The proposed Op-amp provides a slew rate of 189V/μs during rising edge and 227V/μs during falling edge. The circuit offers a open loop Gain of 60 dB with 79 degree phase margin. The designed system is relatively suitable for low power and high frequency applications.

Original language	English
Title of host publication	12th IEEE International Conference Electronics, Energy, Environment, Communication, Computer, Control
Subtitle of host publication	(E3-C3), INDICON 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781467373999
DOIs	https://doi.org/10.1109/INDICON.2015.7443521
Publication status	Published - 29-03-2016
Event	12th IEEE International Conference Electronics, Energy, Environment, Communication, Computer, Control, INDICON 2015 - New Delhi, India Duration: 17-12-2015 → 20-12-2015

Publication series

Name	12th IEEE International Conference Electronics, Energy, Environment, Communication, Computer, Control: (E3-C3), INDICON 2015

Conference

Conference	12th IEEE International Conference Electronics, Energy, Environment, Communication, Computer, Control, INDICON 2015
Country/Territory	India
City	New Delhi
Period	17-12-15 → 20-12-15

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

All Science Journal Classification (ASJC) codes

Computer Networks and Communications
Hardware and Architecture
Energy Engineering and Power Technology
Renewable Energy, Sustainability and the Environment
Control and Systems Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/INDICON.2015.7443521

Cite this

Guruprasad, & Shama, K. (2016). 170 MHz GBW, two stage CMOS operational amplifier with high slew rate using 180 nm technology. In 12th IEEE International Conference Electronics, Energy, Environment, Communication, Computer, Control: (E3-C3), INDICON 2015 Article 7443521 (12th IEEE International Conference Electronics, Energy, Environment, Communication, Computer, Control: (E3-C3), INDICON 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/INDICON.2015.7443521

Guruprasad ; Shama, Kumara. / 170 MHz GBW, two stage CMOS operational amplifier with high slew rate using 180 nm technology. 12th IEEE International Conference Electronics, Energy, Environment, Communication, Computer, Control: (E3-C3), INDICON 2015. Institute of Electrical and Electronics Engineers Inc., 2016. (12th IEEE International Conference Electronics, Energy, Environment, Communication, Computer, Control: (E3-C3), INDICON 2015).

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abstract = "Operational amplifiers (Op-amp) are vital components of any analog IC, improving its performance has a significant effect on the entire design. Among different approaches to realize an Op-amp, a Two stage i.e differential amplifier followed by common source amplifier is simple, elegant and occupies less space. The proposed paper presents design of a Two Stage CMOS Operational amplifier, which operates at ±1.8V power supply using 180 nm CMOS technology. The unity-gain bandwidth of the amplifier is 170 MHz. The Op-amp is internally frequency compensated using a miller capacitor for better stability and phase lag created by the zero is resolved by adding a resistor in series with the miller capacitor. The proposed Op-amp provides a slew rate of 189V/μs during rising edge and 227V/μs during falling edge. The circuit offers a open loop Gain of 60 dB with 79 degree phase margin. The designed system is relatively suitable for low power and high frequency applications.",

author = "Guruprasad and Kumara Shama",

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Guruprasad & Shama, K 2016, 170 MHz GBW, two stage CMOS operational amplifier with high slew rate using 180 nm technology. in 12th IEEE International Conference Electronics, Energy, Environment, Communication, Computer, Control: (E3-C3), INDICON 2015., 7443521, 12th IEEE International Conference Electronics, Energy, Environment, Communication, Computer, Control: (E3-C3), INDICON 2015, Institute of Electrical and Electronics Engineers Inc., 12th IEEE International Conference Electronics, Energy, Environment, Communication, Computer, Control, INDICON 2015, New Delhi, India, 17-12-15. https://doi.org/10.1109/INDICON.2015.7443521

170 MHz GBW, two stage CMOS operational amplifier with high slew rate using 180 nm technology. / Guruprasad; Shama, Kumara.
12th IEEE International Conference Electronics, Energy, Environment, Communication, Computer, Control: (E3-C3), INDICON 2015. Institute of Electrical and Electronics Engineers Inc., 2016. 7443521 (12th IEEE International Conference Electronics, Energy, Environment, Communication, Computer, Control: (E3-C3), INDICON 2015).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Guruprasad, null

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PY - 2016/3/29

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N2 - Operational amplifiers (Op-amp) are vital components of any analog IC, improving its performance has a significant effect on the entire design. Among different approaches to realize an Op-amp, a Two stage i.e differential amplifier followed by common source amplifier is simple, elegant and occupies less space. The proposed paper presents design of a Two Stage CMOS Operational amplifier, which operates at ±1.8V power supply using 180 nm CMOS technology. The unity-gain bandwidth of the amplifier is 170 MHz. The Op-amp is internally frequency compensated using a miller capacitor for better stability and phase lag created by the zero is resolved by adding a resistor in series with the miller capacitor. The proposed Op-amp provides a slew rate of 189V/μs during rising edge and 227V/μs during falling edge. The circuit offers a open loop Gain of 60 dB with 79 degree phase margin. The designed system is relatively suitable for low power and high frequency applications.

AB - Operational amplifiers (Op-amp) are vital components of any analog IC, improving its performance has a significant effect on the entire design. Among different approaches to realize an Op-amp, a Two stage i.e differential amplifier followed by common source amplifier is simple, elegant and occupies less space. The proposed paper presents design of a Two Stage CMOS Operational amplifier, which operates at ±1.8V power supply using 180 nm CMOS technology. The unity-gain bandwidth of the amplifier is 170 MHz. The Op-amp is internally frequency compensated using a miller capacitor for better stability and phase lag created by the zero is resolved by adding a resistor in series with the miller capacitor. The proposed Op-amp provides a slew rate of 189V/μs during rising edge and 227V/μs during falling edge. The circuit offers a open loop Gain of 60 dB with 79 degree phase margin. The designed system is relatively suitable for low power and high frequency applications.

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Guruprasad, Shama K. 170 MHz GBW, two stage CMOS operational amplifier with high slew rate using 180 nm technology. In 12th IEEE International Conference Electronics, Energy, Environment, Communication, Computer, Control: (E3-C3), INDICON 2015. Institute of Electrical and Electronics Engineers Inc. 2016. 7443521. (12th IEEE International Conference Electronics, Energy, Environment, Communication, Computer, Control: (E3-C3), INDICON 2015). doi: 10.1109/INDICON.2015.7443521

170 MHz GBW, two stage CMOS operational amplifier with high slew rate using 180 nm technology

Abstract

Publication series

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UN SDGs

All Science Journal Classification (ASJC) codes

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