TY - GEN
T1 - 170 MHz GBW, two stage CMOS operational amplifier with high slew rate using 180 nm technology
AU - Guruprasad, null
AU - Shama, Kumara
N1 - Publisher Copyright:
© 2015 IEEE.
PY - 2016/3/29
Y1 - 2016/3/29
N2 - Operational amplifiers (Op-amp) are vital components of any analog IC, improving its performance has a significant effect on the entire design. Among different approaches to realize an Op-amp, a Two stage i.e differential amplifier followed by common source amplifier is simple, elegant and occupies less space. The proposed paper presents design of a Two Stage CMOS Operational amplifier, which operates at ±1.8V power supply using 180 nm CMOS technology. The unity-gain bandwidth of the amplifier is 170 MHz. The Op-amp is internally frequency compensated using a miller capacitor for better stability and phase lag created by the zero is resolved by adding a resistor in series with the miller capacitor. The proposed Op-amp provides a slew rate of 189V/μs during rising edge and 227V/μs during falling edge. The circuit offers a open loop Gain of 60 dB with 79 degree phase margin. The designed system is relatively suitable for low power and high frequency applications.
AB - Operational amplifiers (Op-amp) are vital components of any analog IC, improving its performance has a significant effect on the entire design. Among different approaches to realize an Op-amp, a Two stage i.e differential amplifier followed by common source amplifier is simple, elegant and occupies less space. The proposed paper presents design of a Two Stage CMOS Operational amplifier, which operates at ±1.8V power supply using 180 nm CMOS technology. The unity-gain bandwidth of the amplifier is 170 MHz. The Op-amp is internally frequency compensated using a miller capacitor for better stability and phase lag created by the zero is resolved by adding a resistor in series with the miller capacitor. The proposed Op-amp provides a slew rate of 189V/μs during rising edge and 227V/μs during falling edge. The circuit offers a open loop Gain of 60 dB with 79 degree phase margin. The designed system is relatively suitable for low power and high frequency applications.
UR - https://www.scopus.com/pages/publications/84994339233
UR - https://www.scopus.com/pages/publications/84994339233#tab=citedBy
U2 - 10.1109/INDICON.2015.7443521
DO - 10.1109/INDICON.2015.7443521
M3 - Conference contribution
AN - SCOPUS:84994339233
T3 - 12th IEEE International Conference Electronics, Energy, Environment, Communication, Computer, Control: (E3-C3), INDICON 2015
BT - 12th IEEE International Conference Electronics, Energy, Environment, Communication, Computer, Control
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 12th IEEE International Conference Electronics, Energy, Environment, Communication, Computer, Control, INDICON 2015
Y2 - 17 December 2015 through 20 December 2015
ER -
