A critical review of fabrication challenges and reliability issues in top/bottom gated MoS₂ field-effect transistors

INIS

• reviews 100%
• fabrication 100%
• reliability 100%
• field effect transistors 100%
• performance 75%
• devices 75%
• layers 75%
• levels 50%
• geometry 50%
• substrates 50%
• interfaces 50%
• silicon 50%
• transistors 50%
• engineering 25%
• thickness 25%
• industry 25%
• synthesis 25%
• encapsulation 25%
• metals 25%
• size 25%
• density 25%
• defects 25%
• scaling 25%
• electronic equipment 25%
• constraints 25%
• semiconductor materials 25%
• oxides 25%
• semiconductor devices 25%
• dielectrics 25%
• molybdenum sulfides 25%
• two-dimensional systems 25%

Material Science

• Field Effect Transistors 100%
• Transistor 100%
• Silicon 100%
• Defect Density 50%
• Electronic Property 50%
• Monolayers 50%
• Contact Resistance 50%
• Molybdenum 50%
• Two-Dimensional Material 50%
• Semiconductor Device 50%
• Oxide Compound 50%
• Layered Material 50%
• Dielectric Material 50%

Engineering

• Reliability Issue 100%
• Field-Effect Transistor 100%
• Molybdenum Disulfide 100%
• Device Performance 30%
• Material System 10%
• Two Dimensional 10%
• Limitations 10%
• Synthesis Method 10%
• Engineering 10%
• Promising Candidate 10%
• Dielectrics 10%
• Nanometre 10%
• Semiconductor Device 10%
• Defect Density 10%
• Moore's Law 10%
• Elemental Metal 10%
• Gate Oxide 10%
• 2D Material 10%
• Band Gap 10%
• Monolayers 10%