TY - JOUR
T1 - A flexible bilayer p-NiO/n-ZnO films with photodetecting properties in self power mode
AU - Salunkhe, Parashurama
AU - Bhat, Prashant
AU - Kekuda, Dhananjaya
N1 - Funding Information:
We would like to thank the Micro and Nano Characterization Facility (MNCF) at CeNSE, funded by the Ministry of Electronics and Information Technology (MeitY), Government of India, Indian Institute of Science (IISc), Bengaluru.
Publisher Copyright:
© 2022 IOP Publishing Ltd.
PY - 2023/1/1
Y1 - 2023/1/1
N2 - We report highly efficient flexible p-NiO/n-ZnO heterojunction UV photodetectors. NiO and ZnO thin films were grown on plastic polyethylene terephthalate (PET) substrates by dc magnetron sputtering for constructing high quality interfaces. The diode has shown an excellent rectification ratio i.e. 106 under dark mode and observed more than 80% transparency in the visible region. Investigated structural, compositional, and optical properties of the film to correlate the UV photodetector transport characteristics. Further, UV illumination devices exhibit an excellent responsivity of 0.24 A W−1 with a detectivity of 1.25 × 1011 jones and the highest external quantum efficiency of 83.14% achieved at −5 V of bias. The device shows the fastest speed of response with rise/fall times of 86.10 ms/106.60 ms, accomplished at −1 V with the lowest optical power density. The photodiode has shown incredible characteristics that are mainly attributed to the built-in potential and the transport mechanism at the interface.
AB - We report highly efficient flexible p-NiO/n-ZnO heterojunction UV photodetectors. NiO and ZnO thin films were grown on plastic polyethylene terephthalate (PET) substrates by dc magnetron sputtering for constructing high quality interfaces. The diode has shown an excellent rectification ratio i.e. 106 under dark mode and observed more than 80% transparency in the visible region. Investigated structural, compositional, and optical properties of the film to correlate the UV photodetector transport characteristics. Further, UV illumination devices exhibit an excellent responsivity of 0.24 A W−1 with a detectivity of 1.25 × 1011 jones and the highest external quantum efficiency of 83.14% achieved at −5 V of bias. The device shows the fastest speed of response with rise/fall times of 86.10 ms/106.60 ms, accomplished at −1 V with the lowest optical power density. The photodiode has shown incredible characteristics that are mainly attributed to the built-in potential and the transport mechanism at the interface.
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U2 - 10.1088/1402-4896/acaa6f
DO - 10.1088/1402-4896/acaa6f
M3 - Article
AN - SCOPUS:85145352864
SN - 0031-8949
VL - 98
JO - Physica Scripta
JF - Physica Scripta
IS - 1
M1 - 015829
ER -