A Technique for Modeling and Simulating Transistor Based MEMS Sensors

Pramod Martha; Anju Sebastian; V. Seena; Naveen Kadayinti

doi:10.1109/INERTIAL51137.2021.9430485

A Technique for Modeling and Simulating Transistor Based MEMS Sensors

Pramod Martha^*
, Anju Sebastian
, V. Seena^*
, Naveen Kadayinti

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

MEMS inertial sensors are used in handheld smart devices such as smartphones and smart watches to detect and monitor physical activities. The most common transduction techniques used are based on piezoelectric [1], piezoresistive [2] or capacitive [3] techniques. The performance of these sensors is limited by passive detection, the need of a functional material, area of electrode, converter and amplifier circuits in the front end of read-out network. Suspended gate FET (SGFET) based sensors are being investigated as an alternative type of inertial sensor that offers in-built amplification as well as eliminates the aforementioned limitations. The suspended gate SGFET is an active transducer and has the potential for monolithic integration with CMOS.

Original language	English
Title of host publication	INERTIAL 2021 - 8th IEEE International Symposium on Inertial Sensors and Systems, Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728150994
DOIs	https://doi.org/10.1109/INERTIAL51137.2021.9430485
Publication status	Published - 22-03-2021
Event	8th IEEE International Symposium on Inertial Sensors and Systems, INERTIAL 2021 - Virtual, Kailua-Kona, United States Duration: 22-03-2021 → 25-03-2021

Publication series

Name	INERTIAL 2021 - 8th IEEE International Symposium on Inertial Sensors and Systems, Proceedings

Conference

Conference	8th IEEE International Symposium on Inertial Sensors and Systems, INERTIAL 2021
Country/Territory	United States
City	Virtual, Kailua-Kona
Period	22-03-21 → 25-03-21

All Science Journal Classification (ASJC) codes

Control and Optimization
Instrumentation

Access to Document

10.1109/INERTIAL51137.2021.9430485

Cite this

Martha, P., Sebastian, A., Seena, V., & Kadayinti, N. (2021). A Technique for Modeling and Simulating Transistor Based MEMS Sensors. In INERTIAL 2021 - 8th IEEE International Symposium on Inertial Sensors and Systems, Proceedings Article 9430485 (INERTIAL 2021 - 8th IEEE International Symposium on Inertial Sensors and Systems, Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/INERTIAL51137.2021.9430485

Martha, Pramod ; Sebastian, Anju ; Seena, V. et al. / A Technique for Modeling and Simulating Transistor Based MEMS Sensors. INERTIAL 2021 - 8th IEEE International Symposium on Inertial Sensors and Systems, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2021. (INERTIAL 2021 - 8th IEEE International Symposium on Inertial Sensors and Systems, Proceedings).

@inproceedings{3a0781c6abed4d15a87a39b1a75f7694,

title = "A Technique for Modeling and Simulating Transistor Based MEMS Sensors",

abstract = "MEMS inertial sensors are used in handheld smart devices such as smartphones and smart watches to detect and monitor physical activities. The most common transduction techniques used are based on piezoelectric [1], piezoresistive [2] or capacitive [3] techniques. The performance of these sensors is limited by passive detection, the need of a functional material, area of electrode, converter and amplifier circuits in the front end of read-out network. Suspended gate FET (SGFET) based sensors are being investigated as an alternative type of inertial sensor that offers in-built amplification as well as eliminates the aforementioned limitations. The suspended gate SGFET is an active transducer and has the potential for monolithic integration with CMOS.",

author = "Pramod Martha and Anju Sebastian and V. Seena and Naveen Kadayinti",

note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 8th IEEE International Symposium on Inertial Sensors and Systems, INERTIAL 2021 ; Conference date: 22-03-2021 Through 25-03-2021",

year = "2021",

month = mar,

day = "22",

doi = "10.1109/INERTIAL51137.2021.9430485",

language = "English",

series = "INERTIAL 2021 - 8th IEEE International Symposium on Inertial Sensors and Systems, Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "INERTIAL 2021 - 8th IEEE International Symposium on Inertial Sensors and Systems, Proceedings",

address = "United States",

}

Martha, P, Sebastian, A, Seena, V & Kadayinti, N 2021, A Technique for Modeling and Simulating Transistor Based MEMS Sensors. in INERTIAL 2021 - 8th IEEE International Symposium on Inertial Sensors and Systems, Proceedings., 9430485, INERTIAL 2021 - 8th IEEE International Symposium on Inertial Sensors and Systems, Proceedings, Institute of Electrical and Electronics Engineers Inc., 8th IEEE International Symposium on Inertial Sensors and Systems, INERTIAL 2021, Virtual, Kailua-Kona, United States, 22-03-21. https://doi.org/10.1109/INERTIAL51137.2021.9430485

A Technique for Modeling and Simulating Transistor Based MEMS Sensors. / Martha, Pramod; Sebastian, Anju; Seena, V. et al.
INERTIAL 2021 - 8th IEEE International Symposium on Inertial Sensors and Systems, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2021. 9430485 (INERTIAL 2021 - 8th IEEE International Symposium on Inertial Sensors and Systems, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - A Technique for Modeling and Simulating Transistor Based MEMS Sensors

AU - Martha, Pramod

AU - Sebastian, Anju

AU - Seena, V.

AU - Kadayinti, Naveen

PY - 2021/3/22

Y1 - 2021/3/22

N2 - MEMS inertial sensors are used in handheld smart devices such as smartphones and smart watches to detect and monitor physical activities. The most common transduction techniques used are based on piezoelectric [1], piezoresistive [2] or capacitive [3] techniques. The performance of these sensors is limited by passive detection, the need of a functional material, area of electrode, converter and amplifier circuits in the front end of read-out network. Suspended gate FET (SGFET) based sensors are being investigated as an alternative type of inertial sensor that offers in-built amplification as well as eliminates the aforementioned limitations. The suspended gate SGFET is an active transducer and has the potential for monolithic integration with CMOS.

AB - MEMS inertial sensors are used in handheld smart devices such as smartphones and smart watches to detect and monitor physical activities. The most common transduction techniques used are based on piezoelectric [1], piezoresistive [2] or capacitive [3] techniques. The performance of these sensors is limited by passive detection, the need of a functional material, area of electrode, converter and amplifier circuits in the front end of read-out network. Suspended gate FET (SGFET) based sensors are being investigated as an alternative type of inertial sensor that offers in-built amplification as well as eliminates the aforementioned limitations. The suspended gate SGFET is an active transducer and has the potential for monolithic integration with CMOS.

UR - https://www.scopus.com/pages/publications/85107607586

UR - https://www.scopus.com/pages/publications/85107607586#tab=citedBy

U2 - 10.1109/INERTIAL51137.2021.9430485

DO - 10.1109/INERTIAL51137.2021.9430485

M3 - Conference contribution

AN - SCOPUS:85107607586

T3 - INERTIAL 2021 - 8th IEEE International Symposium on Inertial Sensors and Systems, Proceedings

BT - INERTIAL 2021 - 8th IEEE International Symposium on Inertial Sensors and Systems, Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 8th IEEE International Symposium on Inertial Sensors and Systems, INERTIAL 2021

Y2 - 22 March 2021 through 25 March 2021

ER -

Martha P, Sebastian A, Seena V, Kadayinti N. A Technique for Modeling and Simulating Transistor Based MEMS Sensors. In INERTIAL 2021 - 8th IEEE International Symposium on Inertial Sensors and Systems, Proceedings. Institute of Electrical and Electronics Engineers Inc. 2021. 9430485. (INERTIAL 2021 - 8th IEEE International Symposium on Inertial Sensors and Systems, Proceedings). doi: 10.1109/INERTIAL51137.2021.9430485

A Technique for Modeling and Simulating Transistor Based MEMS Sensors

Abstract

Publication series

Conference

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this