Ab-initio Analysis of the Filamentary Behavior Assisted by Ionic Boron Frenkel-pair Defects in h-BN Planar-Atomristor

h-BN has been identified as the most favourable choice for developing ultra-thin and ultrafast memristor devices with the potential to be used as fundamental components for advancing upcoming technologies such as neuromorphic computing and reconfigurable electronics. In this study, we conducted ab-initio investigations to elucidate the mechanism underlying the resistive switching in planar-atomristor based on h-BN. The formation energy, migration energy, and self-connected point defect filamentary paths have been investigated. The most appropriate defect sites for controlling memristive behaviour are negatively charged boron Frenkel-pairs (VB-Bi)-. The study will facilitate the refinement of defects in h-BN for memristive applications.