Activating carrier multiplication in PbSe quantum dot solids by infilling with atomic layer deposition

Sybren Ten Cate; Yao Liu; C. S. Suchand Sandeep; Sachin Kinge; Arjan J. Houtepen; Tom J. Savenije; Juleon M. Schins; Matt Law; Laurens D.A. Siebbeles

doi:10.1021/jz4007492

Activating carrier multiplication in PbSe quantum dot solids by infilling with atomic layer deposition

Sybren Ten Cate
, Yao Liu
, C. S. Suchand Sandeep
, Sachin Kinge
, Arjan J. Houtepen
, Tom J. Savenije
, Juleon M. Schins
, Matt Law
, Laurens D.A. Siebbeles^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

48 Citations (Scopus)

Abstract

Carrier multiplication - the generation of multiple electron-hole pairs by a single photon - is currently of great interest for the development of highly efficient photovoltaics. We study the effects of infilling PbSe quantum-dot solids with metal oxides by atomic layer deposition on carrier multiplication. Using time-resolved microwave conductivity measurements, we find, for the first time, that carrier multiplication occurs in 1,2-ethanedithiol-linked PbSe quantum-dot solids infilled with Al₂O₃ or Al ₂O₃/ZnO, while it is negligible or absent in noninfilled films. The carrier-multiplication efficiency of the infilled quantum-dot solids is close to that of solution-dispersed PbSe quantum dots, and not significantly limited by Auger recombination.

Original language	English
Pages (from-to)	1766-1770
Number of pages	5
Journal	Journal of Physical Chemistry Letters
Volume	4
Issue number	11
DOIs	https://doi.org/10.1021/jz4007492
Publication status	Published - 06-06-2013

All Science Journal Classification (ASJC) codes

General Materials Science
Physical and Theoretical Chemistry

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10.1021/jz4007492

Cite this

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title = "Activating carrier multiplication in PbSe quantum dot solids by infilling with atomic layer deposition",

abstract = "Carrier multiplication - the generation of multiple electron-hole pairs by a single photon - is currently of great interest for the development of highly efficient photovoltaics. We study the effects of infilling PbSe quantum-dot solids with metal oxides by atomic layer deposition on carrier multiplication. Using time-resolved microwave conductivity measurements, we find, for the first time, that carrier multiplication occurs in 1,2-ethanedithiol-linked PbSe quantum-dot solids infilled with Al2O3 or Al 2O3/ZnO, while it is negligible or absent in noninfilled films. The carrier-multiplication efficiency of the infilled quantum-dot solids is close to that of solution-dispersed PbSe quantum dots, and not significantly limited by Auger recombination.",

author = "\{Ten Cate\}, Sybren and Yao Liu and \{Suchand Sandeep\}, \{C. S.\} and Sachin Kinge and Houtepen, \{Arjan J.\} and Savenije, \{Tom J.\} and Schins, \{Juleon M.\} and Matt Law and Siebbeles, \{Laurens D.A.\}",

year = "2013",

month = jun,

day = "6",

doi = "10.1021/jz4007492",

language = "English",

volume = "4",

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journal = "Journal of Physical Chemistry Letters",

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publisher = "American Chemical Society",

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T1 - Activating carrier multiplication in PbSe quantum dot solids by infilling with atomic layer deposition

AU - Ten Cate, Sybren

AU - Liu, Yao

AU - Suchand Sandeep, C. S.

AU - Kinge, Sachin

AU - Houtepen, Arjan J.

AU - Savenije, Tom J.

AU - Schins, Juleon M.

AU - Law, Matt

AU - Siebbeles, Laurens D.A.

PY - 2013/6/6

Y1 - 2013/6/6

N2 - Carrier multiplication - the generation of multiple electron-hole pairs by a single photon - is currently of great interest for the development of highly efficient photovoltaics. We study the effects of infilling PbSe quantum-dot solids with metal oxides by atomic layer deposition on carrier multiplication. Using time-resolved microwave conductivity measurements, we find, for the first time, that carrier multiplication occurs in 1,2-ethanedithiol-linked PbSe quantum-dot solids infilled with Al2O3 or Al 2O3/ZnO, while it is negligible or absent in noninfilled films. The carrier-multiplication efficiency of the infilled quantum-dot solids is close to that of solution-dispersed PbSe quantum dots, and not significantly limited by Auger recombination.

AB - Carrier multiplication - the generation of multiple electron-hole pairs by a single photon - is currently of great interest for the development of highly efficient photovoltaics. We study the effects of infilling PbSe quantum-dot solids with metal oxides by atomic layer deposition on carrier multiplication. Using time-resolved microwave conductivity measurements, we find, for the first time, that carrier multiplication occurs in 1,2-ethanedithiol-linked PbSe quantum-dot solids infilled with Al2O3 or Al 2O3/ZnO, while it is negligible or absent in noninfilled films. The carrier-multiplication efficiency of the infilled quantum-dot solids is close to that of solution-dispersed PbSe quantum dots, and not significantly limited by Auger recombination.

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JO - Journal of Physical Chemistry Letters

JF - Journal of Physical Chemistry Letters

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ER -

Activating carrier multiplication in PbSe quantum dot solids by infilling with atomic layer deposition

Abstract

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