Advancements in P-type Wide and Ultra-Wide Bandgap Oxide Semiconductors for Prospective Applications

Arige Sumanth; Vikash Mishra; Srungarapu Leela Nagendra; Mamidanna Sri Ramachandra Rao; Tejendra Dixit

doi:10.1002/pssr.202500017

Advancements in P-type Wide and Ultra-Wide Bandgap Oxide Semiconductors for Prospective Applications

Arige Sumanth
, Vikash Mishra
, Srungarapu Leela Nagendra
, Mamidanna Sri Ramachandra Rao
, Tejendra Dixit^*

^*Corresponding author for this work

Research output: Contribution to journal › Review article › peer-review

10 Citations (Scopus)

Abstract

Wide and ultra-wide bandgap (UWBG) p-type oxide semiconductors are gaining significant attention due to their unique optoelectronic properties, high thermal stability, large breakdown voltages, and potential for next-generation device applications. The limited availability of high-performance p-type semiconductors has historically constrained optoelectronic advancements, but recent progress in p-type metal oxides has opened new pathways for innovative technologies. This review explores the latest developments in p-type wide and UWBG oxide semiconductors, emphasizing their role in emerging applications such as solar-blind photodetectors, AI-driven optoelectronic sensors, high-power electronics, memristors, synaptic devices, and transparent electronics. The review highlights both theoretical and experimental advancements, offering insights into their future impact on optoelectronic and electronic industries.

Original language	English
Article number	2500017
Journal	Physica Status Solidi - Rapid Research Letters
Volume	19
Issue number	6
DOIs	https://doi.org/10.1002/pssr.202500017
Publication status	Published - 06-2025

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics

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10.1002/pssr.202500017

Cite this

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title = "Advancements in P-type Wide and Ultra-Wide Bandgap Oxide Semiconductors for Prospective Applications",

abstract = "Wide and ultra-wide bandgap (UWBG) p-type oxide semiconductors are gaining significant attention due to their unique optoelectronic properties, high thermal stability, large breakdown voltages, and potential for next-generation device applications. The limited availability of high-performance p-type semiconductors has historically constrained optoelectronic advancements, but recent progress in p-type metal oxides has opened new pathways for innovative technologies. This review explores the latest developments in p-type wide and UWBG oxide semiconductors, emphasizing their role in emerging applications such as solar-blind photodetectors, AI-driven optoelectronic sensors, high-power electronics, memristors, synaptic devices, and transparent electronics. The review highlights both theoretical and experimental advancements, offering insights into their future impact on optoelectronic and electronic industries.",

author = "Arige Sumanth and Vikash Mishra and Nagendra, \{Srungarapu Leela\} and Rao, \{Mamidanna Sri Ramachandra\} and Tejendra Dixit",

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language = "English",

volume = "19",

journal = "Physica Status Solidi - Rapid Research Letters",

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T1 - Advancements in P-type Wide and Ultra-Wide Bandgap Oxide Semiconductors for Prospective Applications

AU - Sumanth, Arige

AU - Mishra, Vikash

AU - Nagendra, Srungarapu Leela

AU - Rao, Mamidanna Sri Ramachandra

AU - Dixit, Tejendra

PY - 2025/6

Y1 - 2025/6

N2 - Wide and ultra-wide bandgap (UWBG) p-type oxide semiconductors are gaining significant attention due to their unique optoelectronic properties, high thermal stability, large breakdown voltages, and potential for next-generation device applications. The limited availability of high-performance p-type semiconductors has historically constrained optoelectronic advancements, but recent progress in p-type metal oxides has opened new pathways for innovative technologies. This review explores the latest developments in p-type wide and UWBG oxide semiconductors, emphasizing their role in emerging applications such as solar-blind photodetectors, AI-driven optoelectronic sensors, high-power electronics, memristors, synaptic devices, and transparent electronics. The review highlights both theoretical and experimental advancements, offering insights into their future impact on optoelectronic and electronic industries.

AB - Wide and ultra-wide bandgap (UWBG) p-type oxide semiconductors are gaining significant attention due to their unique optoelectronic properties, high thermal stability, large breakdown voltages, and potential for next-generation device applications. The limited availability of high-performance p-type semiconductors has historically constrained optoelectronic advancements, but recent progress in p-type metal oxides has opened new pathways for innovative technologies. This review explores the latest developments in p-type wide and UWBG oxide semiconductors, emphasizing their role in emerging applications such as solar-blind photodetectors, AI-driven optoelectronic sensors, high-power electronics, memristors, synaptic devices, and transparent electronics. The review highlights both theoretical and experimental advancements, offering insights into their future impact on optoelectronic and electronic industries.

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DO - 10.1002/pssr.202500017

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JF - Physica Status Solidi - Rapid Research Letters

IS - 6

M1 - 2500017

ER -

Advancements in P-type Wide and Ultra-Wide Bandgap Oxide Semiconductors for Prospective Applications

Abstract

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