TY - JOUR
T1 - Ambipolar behavior of Te and its effect on the optical emission of ZnO
T2 - Te epitaxial thin film
AU - Sahu, R.
AU - Dileep, K.
AU - Negi, D. S.
AU - Nagaraja, K. K.
AU - Datta, R.
N1 - Publisher Copyright:
© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
PY - 2015/8/1
Y1 - 2015/8/1
N2 - We present control over the ambipolar nature of Te in ZnO and the corresponding optical band gap in epitaxial thin film grown by pulsed laser deposition. Experimentally, the decrease in band gap is found to be strongly dependent on the Te concentration for TeO compared to TeZn. Emission at 3eV for TeZn, irrespective of Te content is explained by first principle calculation considering Zn vacancy in the lattice. An experimental band bowing parameter of ∼7eV is obtained for TeO and is in agreement with modified Becke-Johnson potential (mBJLDA) based theoretical calculation. The physical insight into the nature of band bowing is elucidated.
AB - We present control over the ambipolar nature of Te in ZnO and the corresponding optical band gap in epitaxial thin film grown by pulsed laser deposition. Experimentally, the decrease in band gap is found to be strongly dependent on the Te concentration for TeO compared to TeZn. Emission at 3eV for TeZn, irrespective of Te content is explained by first principle calculation considering Zn vacancy in the lattice. An experimental band bowing parameter of ∼7eV is obtained for TeO and is in agreement with modified Becke-Johnson potential (mBJLDA) based theoretical calculation. The physical insight into the nature of band bowing is elucidated.
UR - https://www.scopus.com/pages/publications/84938554446
UR - https://www.scopus.com/pages/publications/84938554446#tab=citedBy
U2 - 10.1002/pssb.201451443
DO - 10.1002/pssb.201451443
M3 - Article
AN - SCOPUS:84938554446
SN - 0370-1972
VL - 252
SP - 1743
EP - 1748
JO - Physica Status Solidi (B) Basic Research
JF - Physica Status Solidi (B) Basic Research
IS - 8
ER -