INIS
concentration
100%
thin films
100%
zinc oxides
100%
gases
100%
electron beams
100%
irradiation
83%
films
83%
doped materials
83%
indium
83%
oxygen
33%
sensors
33%
vacancies
33%
grain boundaries
33%
investigations
16%
surfaces
16%
growth
16%
radiations
16%
modifications
16%
stability
16%
environment
16%
scanning electron microscopy
16%
xrd
16%
dose rates
16%
temperature range 0273-0400 k
16%
photoluminescence
16%
defects
16%
adsorption
16%
interstitials
16%
Physics
Detection
100%
Thin Films
100%
Electron Beams
100%
Gases
100%
Indium
100%
ZnO
100%
Oxygen Vacancy
80%
Radiation Effect
40%
Responses
40%
Grain Boundaries
40%
Act
20%
Environment
20%
Room Temperature
20%
X Ray Diffraction
20%
Photoluminescence
20%
Revisions
20%
Growth
20%
Defects
20%
Scanning Electron Microscopy
20%
Adsorption
20%
Operating Temperature
20%
Position (Location)
20%
Radiation
20%
Wurtzite
20%
Interstitials
20%
Deterioration
20%
Material Science
Thin Films
100%
ZnO
100%
Indium
100%
Gas
100%
Temperature
40%
Irradiation
40%
Sensor
40%
Film
40%
Grain Boundary
40%
Photoluminescence
20%
Surface
20%
Defect
20%
Scanning Electron Microscopy
20%
X-Ray Diffraction
20%
Adsorption
20%
Deterioration
20%