TY - JOUR
T1 - An investigation on the role of low temperature annealing on the structural, morphological, optical, and electrical properties of DC magnetron sputtered Zn(1-x)Sn(x)O thin films
AU - Bhat, Prashant
AU - Salunkhe, Parashurama
AU - Murari, M. S.
AU - Kekuda, Dhananjaya
N1 - Funding Information:
The authors are thankful to the Manipal Academy of Higher Education for financial support under the T.M.A Pai PhD scholarship program and Intramural Fellowship. The authors are grateful to Dr. Sudha D. Kamath (Manipal Institute of Technology) for PL measurements. A part of this research work has used the facility at IISc-CeNSE, funded by the Ministry of electronics and information Technology (MeitY), Government of India.
Publisher Copyright:
© 2021 Elsevier B.V.
PY - 2022/3/1
Y1 - 2022/3/1
N2 - This study reveals the effect of low-temperature air annealing on various physical properties of Zn(1-x) Sn (x)O (x = 0.14) (TZO) thin films. The thin films were grown on glass substrates by co-sputtering techniques and the grown films were subjected to low temperature air -annealing. X-ray diffraction studies on the grown samples reveal a polycrystalline nature with a hexagonal wurtzite structure. A Change in orientation from (002) to (100) followed by an increase in crystallinity was observed in 100 °C annealed samples. A variation in the optical band gap from 3.17 to 3.44 eV after annealing was noticed. Changes in the defect density of Zn interstitials and Oxygen vacancies are clearly noticeable from PL analysis. X-ray Photoelectron Spectroscopy (XPS) elucidate an enhanced oxygen vacancies after doping. The van der Pauw resistivity measurement revealed a decrement in the resistivity after doping and annealing.
AB - This study reveals the effect of low-temperature air annealing on various physical properties of Zn(1-x) Sn (x)O (x = 0.14) (TZO) thin films. The thin films were grown on glass substrates by co-sputtering techniques and the grown films were subjected to low temperature air -annealing. X-ray diffraction studies on the grown samples reveal a polycrystalline nature with a hexagonal wurtzite structure. A Change in orientation from (002) to (100) followed by an increase in crystallinity was observed in 100 °C annealed samples. A variation in the optical band gap from 3.17 to 3.44 eV after annealing was noticed. Changes in the defect density of Zn interstitials and Oxygen vacancies are clearly noticeable from PL analysis. X-ray Photoelectron Spectroscopy (XPS) elucidate an enhanced oxygen vacancies after doping. The van der Pauw resistivity measurement revealed a decrement in the resistivity after doping and annealing.
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U2 - 10.1016/j.physb.2021.413571
DO - 10.1016/j.physb.2021.413571
M3 - Article
AN - SCOPUS:85123210268
SN - 0921-4526
VL - 628
JO - Physica B: Condensed Matter
JF - Physica B: Condensed Matter
M1 - 413571
ER -