An observation of charge trapping phenomena in GaN/AlGaN/Gd 2O3 MOS schottky structure

Atanu Das; Liann Be Chang; Ray Ming Lin; Siddheswar Maikap

doi:10.1109/INEC.2011.5991688

An observation of charge trapping phenomena in GaN/AlGaN/Gd ₂O₃ MOS schottky structure

Atanu Das
, Liann Be Chang^*
, Ray Ming Lin
, Siddheswar Maikap

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Charge trapping specially electron trapping phenomenon is observed in GaN/AlGaN/Gd₂O₃ MOS schottky structure for first time. Under positive pulse programming, a significant hysteresis window is observed. A 4.4V hysteresis window is observed under +10V@100ms pulse programming. It is worthy to mention that no erase phenomenon is observed, even very large negative bias such as -40V. Only time dependent natural charge loss is observed. Even so, a 1.76V hysteresis window is still remained after 14 hours of retention. It is inferred that our fabricated MOS structure is behaved as a storage node under positive pulse programming. Good charge retention is observed and it may be used as the Write Once Read Many (WORM) memory in future.

Original language	English
Title of host publication	4th IEEE International NanoElectronics Conference, INEC 2011
DOIs	https://doi.org/10.1109/INEC.2011.5991688
Publication status	Published - 2011
Event	4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, Taiwan, Province of China Duration: 21-06-2011 → 24-06-2011

Publication series

Name	Proceedings - International NanoElectronics Conference, INEC
ISSN (Print)	2159-3523

Conference

Conference	4th IEEE International Nanoelectronics Conference, INEC 2011
Country/Territory	Taiwan, Province of China
City	Tao-Yuan
Period	21-06-11 → 24-06-11

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/INEC.2011.5991688

Cite this

@inproceedings{a7aa763b6f204602aae9d1897206c30b,

title = "An observation of charge trapping phenomena in GaN/AlGaN/Gd 2O3 MOS schottky structure",

abstract = "Charge trapping specially electron trapping phenomenon is observed in GaN/AlGaN/Gd2O3 MOS schottky structure for first time. Under positive pulse programming, a significant hysteresis window is observed. A 4.4V hysteresis window is observed under +10V@100ms pulse programming. It is worthy to mention that no erase phenomenon is observed, even very large negative bias such as -40V. Only time dependent natural charge loss is observed. Even so, a 1.76V hysteresis window is still remained after 14 hours of retention. It is inferred that our fabricated MOS structure is behaved as a storage node under positive pulse programming. Good charge retention is observed and it may be used as the Write Once Read Many (WORM) memory in future.",

author = "Atanu Das and \{Be Chang\}, Liann and Lin, \{Ray Ming\} and Siddheswar Maikap",

year = "2011",

doi = "10.1109/INEC.2011.5991688",

language = "English",

isbn = "9781457703799",

series = "Proceedings - International NanoElectronics Conference, INEC",

booktitle = "4th IEEE International NanoElectronics Conference, INEC 2011",

note = "4th IEEE International Nanoelectronics Conference, INEC 2011 ; Conference date: 21-06-2011 Through 24-06-2011",

}

Das, A, Be Chang, L, Lin, RM & Maikap, S 2011, An observation of charge trapping phenomena in GaN/AlGaN/Gd ₂O₃ MOS schottky structure. in 4th IEEE International NanoElectronics Conference, INEC 2011., 5991688, Proceedings - International NanoElectronics Conference, INEC, 4th IEEE International Nanoelectronics Conference, INEC 2011, Tao-Yuan, Taiwan, Province of China, 21-06-11. https://doi.org/10.1109/INEC.2011.5991688

TY - GEN

T1 - An observation of charge trapping phenomena in GaN/AlGaN/Gd 2O3 MOS schottky structure

AU - Das, Atanu

AU - Be Chang, Liann

AU - Lin, Ray Ming

AU - Maikap, Siddheswar

PY - 2011

Y1 - 2011

N2 - Charge trapping specially electron trapping phenomenon is observed in GaN/AlGaN/Gd2O3 MOS schottky structure for first time. Under positive pulse programming, a significant hysteresis window is observed. A 4.4V hysteresis window is observed under +10V@100ms pulse programming. It is worthy to mention that no erase phenomenon is observed, even very large negative bias such as -40V. Only time dependent natural charge loss is observed. Even so, a 1.76V hysteresis window is still remained after 14 hours of retention. It is inferred that our fabricated MOS structure is behaved as a storage node under positive pulse programming. Good charge retention is observed and it may be used as the Write Once Read Many (WORM) memory in future.

AB - Charge trapping specially electron trapping phenomenon is observed in GaN/AlGaN/Gd2O3 MOS schottky structure for first time. Under positive pulse programming, a significant hysteresis window is observed. A 4.4V hysteresis window is observed under +10V@100ms pulse programming. It is worthy to mention that no erase phenomenon is observed, even very large negative bias such as -40V. Only time dependent natural charge loss is observed. Even so, a 1.76V hysteresis window is still remained after 14 hours of retention. It is inferred that our fabricated MOS structure is behaved as a storage node under positive pulse programming. Good charge retention is observed and it may be used as the Write Once Read Many (WORM) memory in future.

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DO - 10.1109/INEC.2011.5991688

M3 - Conference contribution

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SN - 9781457703799

T3 - Proceedings - International NanoElectronics Conference, INEC

BT - 4th IEEE International NanoElectronics Conference, INEC 2011

T2 - 4th IEEE International Nanoelectronics Conference, INEC 2011

Y2 - 21 June 2011 through 24 June 2011

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