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Analysis of microstructural properties, energy band structure, and defect levels of ZnS films obtained from micro-controlled SILAR method
V. K. Ashith,
Gowrish K. Rao
*
*
Corresponding author for this work
Department of Physics, Manipal Institute of Technology, Manipal
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peer-review
6
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INIS
levels
100%
energy
100%
films
100%
defects
100%
zinc sulfides
100%
microstructure
100%
photoluminescence
33%
spectra
22%
size
22%
precursor
22%
emission
22%
glass
11%
reduction
11%
peaks
11%
concentration
11%
absorption
11%
zinc
11%
layers
11%
wavelengths
11%
ions
11%
thin films
11%
substrates
11%
zinc chlorides
11%
sulfur
11%
adsorption
11%
electrical properties
11%
polycrystals
11%
interstitials
11%
electronic structure
11%
vacancies
11%
grain boundaries
11%
Engineering
Band Structure
100%
Crystallite Size
100%
Energy Band
100%
Band Gap
100%
Band Edge
50%
Energy Band Diagram
50%
Thin Films
50%
Microcontroller
50%
Polycrystalline
50%
Grain Boundaries
50%
Glass Substrate
50%
Material Science
Film
100%
Electronic Band Structure
100%
Photoluminescence
33%
Crystallite Size
22%
Zinc
11%
Thin Films
11%
Sulfur Vacancies
11%
Grain Boundaries
11%