TY - GEN
T1 - Analytical Model of Resistivity Modulation and Assessing Temporal Dynamics of Complementary FET influenced by α-Particle Radiation
AU - Kumar, Sandeep
AU - Jain, Khushi
AU - Patil, Deven H.
AU - Rathore, Sunil
AU - Dasgupta, S.
AU - Bagga, Navjeet
N1 - Publisher Copyright:
© 2026 IEEE.
PY - 2026
Y1 - 2026
N2 - The high-energy radiation causes severe reliability and operational challenges in logic devices, as it generates electron-hole pairs (EHPs) upon colliding with the device and alters its effective resistivity/conductivity. This work proposes an analytical model for resistivity modulation and temporal analysis of Complementary FET (CFET) affected by α-particle radiation. In a well-calibrated TCAD setup, the device under test (DUT) is designed and exposed to a 500keV α-particle at different regions. The peak activation of EHP is observed when a strike happens at the drain extension region (DEXT). In addition, the angle of incidence (AoI) plays a crucial role in EHP generation/recombination (e.g., an AoI of 90° at DEXT leads to a 14.68% increase in OFF current compared to an AoI of 30°). The linear energy transfer (LET) effects are confirmed as the total current density increases by 0.87 kA/cm2 when the radiation energy increases from 100 keV to 500 keV. To capture the resistivity modulation due to α-radiation, we proposed an analytical model for CFET resistance using the transmission line method (TLM). The proposed model aligns with TCAD results within < 5% error, establishing a reliable framework for investigating the α-radiation-induced reliability concerns in CFET technology.
AB - The high-energy radiation causes severe reliability and operational challenges in logic devices, as it generates electron-hole pairs (EHPs) upon colliding with the device and alters its effective resistivity/conductivity. This work proposes an analytical model for resistivity modulation and temporal analysis of Complementary FET (CFET) affected by α-particle radiation. In a well-calibrated TCAD setup, the device under test (DUT) is designed and exposed to a 500keV α-particle at different regions. The peak activation of EHP is observed when a strike happens at the drain extension region (DEXT). In addition, the angle of incidence (AoI) plays a crucial role in EHP generation/recombination (e.g., an AoI of 90° at DEXT leads to a 14.68% increase in OFF current compared to an AoI of 30°). The linear energy transfer (LET) effects are confirmed as the total current density increases by 0.87 kA/cm2 when the radiation energy increases from 100 keV to 500 keV. To capture the resistivity modulation due to α-radiation, we proposed an analytical model for CFET resistance using the transmission line method (TLM). The proposed model aligns with TCAD results within < 5% error, establishing a reliable framework for investigating the α-radiation-induced reliability concerns in CFET technology.
UR - https://www.scopus.com/pages/publications/105040803017
UR - https://www.scopus.com/pages/publications/105040803017#tab=citedBy
U2 - 10.1109/EDTM65772.2026.11497484
DO - 10.1109/EDTM65772.2026.11497484
M3 - Conference contribution
AN - SCOPUS:105040803017
T3 - 10th IEEE Electron Devices Technology and Manufacturing Conference: Emerging Semiconductor Devices and Manufacturing Technologies, EDTM 2026
BT - 10th IEEE Electron Devices Technology and Manufacturing Conference
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 10th IEEE Electron Devices Technology and Manufacturing Conference: Emerging Semiconductor Devices and Manufacturing Technologies, EDTM 2026
Y2 - 1 March 2026 through 4 March 2026
ER -