TY - JOUR
T1 - Annealing-induced phase conversion on spray pyrolyzed cubic-SnS thin films
AU - Kishore Bhat, T. R.
AU - Jeganath, K.
AU - George, Sajan D.
AU - Raviprakash, Y.
N1 - Funding Information:
Open access funding provided by Manipal Academy of Higher Education, Manipal. This work was supported by the Department of Science and Technology (DST) under the Science and Engineering Research Board (SERB), Govt. of India (EMR/2017/002575).
Publisher Copyright:
© 2023, The Author(s).
PY - 2023/3
Y1 - 2023/3
N2 - The cubic-tin sulfide (SnS) compound material is optimal for the absorber layer in photovoltaic technology. In this study, the role of annealing temperature on the physical properties of cubic-SnS thin film has been determined. The spray pyrolyzed SnS thin films were post-annealed, using the chemical vapor deposition system, at the temperature range between 350 and 500 °C The annealed films have been analyzed using a comprehensive range of characterization techniques i.e., X-ray diffraction (XRD), Raman spectroscopy, UV–Vis spectroscopy, Photoluminescence spectroscopy (PL), Field-emission scanning electron microscopy (FESEM), Energy dispersive spectroscopy (EDS) and Hall measurements. The XRD results discovered the phase deterioration of cubic-SnS at higher annealing temperatures i.e., > 350 °C. Further, the Raman analysis confirmed the cubic-SnS phase deterioration, along with the formation of SnS2 and Sn2S3 secondary phases, at higher annealing temperatures. Besides that, a band gap in the range of 1.63–1.68 eV has been obtained for the SnS thin films. The films exhibit the near-band edge emission peak in the PL spectra. Moreover, the SEM micrographs show the needle-shaped grains, and their size and distribution were increased with respect to the enhancement in annealing temperature. A considerable amount of sulfur inclusion was observed in EDS analysis and the films annealed at 450° exhibit the near stoichiometric composition ratio of Sn/S = 1.01. The hall measurement studies showed resistivity, carrier concentration, and mobility of 29.4–376.5 Ω cm, 4.2 × 1014–3.0 × 1016 cm−3 and 13.1–66.1 cm2/Vs, respectively.
AB - The cubic-tin sulfide (SnS) compound material is optimal for the absorber layer in photovoltaic technology. In this study, the role of annealing temperature on the physical properties of cubic-SnS thin film has been determined. The spray pyrolyzed SnS thin films were post-annealed, using the chemical vapor deposition system, at the temperature range between 350 and 500 °C The annealed films have been analyzed using a comprehensive range of characterization techniques i.e., X-ray diffraction (XRD), Raman spectroscopy, UV–Vis spectroscopy, Photoluminescence spectroscopy (PL), Field-emission scanning electron microscopy (FESEM), Energy dispersive spectroscopy (EDS) and Hall measurements. The XRD results discovered the phase deterioration of cubic-SnS at higher annealing temperatures i.e., > 350 °C. Further, the Raman analysis confirmed the cubic-SnS phase deterioration, along with the formation of SnS2 and Sn2S3 secondary phases, at higher annealing temperatures. Besides that, a band gap in the range of 1.63–1.68 eV has been obtained for the SnS thin films. The films exhibit the near-band edge emission peak in the PL spectra. Moreover, the SEM micrographs show the needle-shaped grains, and their size and distribution were increased with respect to the enhancement in annealing temperature. A considerable amount of sulfur inclusion was observed in EDS analysis and the films annealed at 450° exhibit the near stoichiometric composition ratio of Sn/S = 1.01. The hall measurement studies showed resistivity, carrier concentration, and mobility of 29.4–376.5 Ω cm, 4.2 × 1014–3.0 × 1016 cm−3 and 13.1–66.1 cm2/Vs, respectively.
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U2 - 10.1007/s10854-023-10157-8
DO - 10.1007/s10854-023-10157-8
M3 - Article
AN - SCOPUS:85150485742
SN - 0957-4522
VL - 34
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 8
M1 - 747
ER -
