TY - GEN
T1 - ASIC implementation of DDR SDRAM memory controller
AU - Bakshi, Amit
AU - Pandey, Sudhanshu Shekhar
AU - Pradhan, Tribikram
AU - Dey, Ratnadip
PY - 2013
Y1 - 2013
N2 - A Dedicated Memory Controller is of prime importance in applications that do not contain microprocessors (high-end applications). The Memory Controller provides command signals for memory refresh, read and write operation and initialization of SDRAM. Our work will focus on ASIC Design methodology of Double Data Rate (DDR) SDRAM Controller that is located between the DDR SDRAM and Bus Master. The Controller simplifies the SDRAM command interface to standard system read/write interface and also optimizes the access time of read/write cycle. Double Data Rate (DDR) SDRAM Controller is implemented using Cadence RTL Compiler.
AB - A Dedicated Memory Controller is of prime importance in applications that do not contain microprocessors (high-end applications). The Memory Controller provides command signals for memory refresh, read and write operation and initialization of SDRAM. Our work will focus on ASIC Design methodology of Double Data Rate (DDR) SDRAM Controller that is located between the DDR SDRAM and Bus Master. The Controller simplifies the SDRAM command interface to standard system read/write interface and also optimizes the access time of read/write cycle. Double Data Rate (DDR) SDRAM Controller is implemented using Cadence RTL Compiler.
UR - https://www.scopus.com/pages/publications/84881036409
UR - https://www.scopus.com/pages/publications/84881036409#tab=citedBy
U2 - 10.1109/ICE-CCN.2013.6528467
DO - 10.1109/ICE-CCN.2013.6528467
M3 - Conference contribution
AN - SCOPUS:84881036409
SN - 9781467350365
T3 - 2013 IEEE International Conference on Emerging Trends in Computing, Communication and Nanotechnology, ICE-CCN 2013
SP - 74
EP - 78
BT - 2013 IEEE International Conference on Emerging Trends in Computing, Communication and Nanotechnology, ICE-CCN 2013
T2 - 2013 IEEE International Conference on Emerging Trends in Computing, Communication and Nanotechnology, ICE-CCN 2013
Y2 - 25 March 2013 through 26 March 2013
ER -