Bandgap tailoring in CdxZn1 − xS alloy films deposited by successive ionic layer adsorption and reaction

Ashith VK; Gowrish K. Rao

doi:10.1016/j.tsf.2017.02.020

Bandgap tailoring in Cd_xZn_1 − xS alloy films deposited by successive ionic layer adsorption and reaction

Ashith VK
, Gowrish K. Rao^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

The paper reports tailoring of the optical bandgap in SILAR deposited Cd_xZn_1-xS alloy films. Acetates and chlorides of zinc and cadmium were used to obtain the films. Two separate routes were employed to achieve desired alloy composition in the films. In the first route, the molar concentration of the precursors was varied. In the second route; various volumes of precursors (with fixed concentration) were used. The films were polycrystalline with predominant hexagonal phase. The bandgap of the films varied from 2.4 eV to 3.5 eV. This bandgap range is highly optimum for the window layer in solar cells and other optoelectronic applications. Variation in the bandgap was studied as a function of alloy composition. The bowing parameter of the bandgap variation was found to be different for two routes chosen to deposit the films.

Original language	English
Pages (from-to)	1-8
Number of pages	8
Journal	Thin Solid Films
Volume	626
DOIs	https://doi.org/10.1016/j.tsf.2017.02.020
Publication status	Published - 31-03-2017

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2017.02.020

Cite this

@article{aaa6d15b3b6e4276bea1f3b6b6396880,

title = "Bandgap tailoring in CdxZn1 − xS alloy films deposited by successive ionic layer adsorption and reaction",

abstract = "The paper reports tailoring of the optical bandgap in SILAR deposited CdxZn1-xS alloy films. Acetates and chlorides of zinc and cadmium were used to obtain the films. Two separate routes were employed to achieve desired alloy composition in the films. In the first route, the molar concentration of the precursors was varied. In the second route; various volumes of precursors (with fixed concentration) were used. The films were polycrystalline with predominant hexagonal phase. The bandgap of the films varied from 2.4 eV to 3.5 eV. This bandgap range is highly optimum for the window layer in solar cells and other optoelectronic applications. Variation in the bandgap was studied as a function of alloy composition. The bowing parameter of the bandgap variation was found to be different for two routes chosen to deposit the films.",

author = "Ashith VK and Rao, \{Gowrish K.\}",

note = "Publisher Copyright: {\textcopyright} 2017 Elsevier B.V.",

year = "2017",

month = mar,

day = "31",

doi = "10.1016/j.tsf.2017.02.020",

language = "English",

volume = "626",

pages = "1--8",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Bandgap tailoring in CdxZn1 − xS alloy films deposited by successive ionic layer adsorption and reaction

AU - VK, Ashith

AU - Rao, Gowrish K.

PY - 2017/3/31

Y1 - 2017/3/31

N2 - The paper reports tailoring of the optical bandgap in SILAR deposited CdxZn1-xS alloy films. Acetates and chlorides of zinc and cadmium were used to obtain the films. Two separate routes were employed to achieve desired alloy composition in the films. In the first route, the molar concentration of the precursors was varied. In the second route; various volumes of precursors (with fixed concentration) were used. The films were polycrystalline with predominant hexagonal phase. The bandgap of the films varied from 2.4 eV to 3.5 eV. This bandgap range is highly optimum for the window layer in solar cells and other optoelectronic applications. Variation in the bandgap was studied as a function of alloy composition. The bowing parameter of the bandgap variation was found to be different for two routes chosen to deposit the films.

AB - The paper reports tailoring of the optical bandgap in SILAR deposited CdxZn1-xS alloy films. Acetates and chlorides of zinc and cadmium were used to obtain the films. Two separate routes were employed to achieve desired alloy composition in the films. In the first route, the molar concentration of the precursors was varied. In the second route; various volumes of precursors (with fixed concentration) were used. The films were polycrystalline with predominant hexagonal phase. The bandgap of the films varied from 2.4 eV to 3.5 eV. This bandgap range is highly optimum for the window layer in solar cells and other optoelectronic applications. Variation in the bandgap was studied as a function of alloy composition. The bowing parameter of the bandgap variation was found to be different for two routes chosen to deposit the films.

UR - https://www.scopus.com/pages/publications/85012146669

UR - https://www.scopus.com/pages/publications/85012146669#tab=citedBy

U2 - 10.1016/j.tsf.2017.02.020

DO - 10.1016/j.tsf.2017.02.020

M3 - Article

AN - SCOPUS:85012146669

SN - 0040-6090

VL - 626

SP - 1

EP - 8

JO - Thin Solid Films

JF - Thin Solid Films

ER -

Bandgap tailoring in Cd_xZn_1 − xS alloy films deposited by successive ionic layer adsorption and reaction

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this