Benchmarking of Multi-Bridge-Channel FETs Toward Analog and Mixed-Mode Circuit Applications

In this study, for the very first time developing of n- and p-type 3-D single-channel (SC) FinFET and gate-all-around (GAA) Multi-Bridge-Channel FETs (MBCFET) like nanowire FET (NWFET) and nanosheet FET (NSFET) are benchmarked towards device and circuit levels which are emulated with International Road map for Devices and Systems (IRDS) for sub-5-nm technology nodes. Compared to the FinFET, the MBCFETs exhibits higher ON-current ( $I_{\mathrm {ON}})$ , switching ratio ( $I_{\mathrm {ON}}/I_{\mathrm {OFF}})$ , lower subthreshold-swing (SS) and drain-induced barrier lowering (DIBL). Except for extended parasitic capacitances ( $C_{\mathrm {para}})$ , our benchmarking results show that the NWFET and NSFET achieve the high-performance (HP) and low-power (LP) goals of IRDS. Furthermore, the NSFET delivers superior performance towards DC and analog/RF metrics. The cut-off frequency ( $f_{\mathrm {T}})$ and gain bandwidth product (GBW) are higher (because of high $I_{\mathrm {ON}})$ in the case of NSFET, even though the capacitive effect is significant. Further, the logic circuit applications like CMOS inverter and ring oscillator (RO) circuits are analyzed and compared in detail. The CMOS inverters propagation delays ( $\tau{\mathrm {p}})$ is reduced to 31% from FinFET to NWFET and 12% from NWFET to NSFETs is noticed. Also, the NWFET and NSFET based ROs offer 39% and 56% high oscillation frequency ( $f_{\mathrm {osc}})$ compared to that of FinFET counterpart. Finally, the single stage current mirror performance and operational transconductance amplifiers (OTA) gain and common mode rejection ratio (CMRR) are carried out towards analog and mixed-mode circuit applications.