TY - JOUR
T1 - BiCuSeO/GdH2 thermoelectric composite
T2 - a p-type to n-type promoter with superior charge transport
AU - Bhoomika, R. Bhat
AU - Gurukrishna, K.
AU - Madhukar, N. P.
AU - Shanubhogue, U. Deepika
AU - Rao, Ashok
AU - Huang, Ruei Yu
AU - Kuo, Yung Kang
AU - Nagaraja, K. K.
N1 - Funding Information:
One of the authors (AR) acknowledges DST-FIST Grant (SR/FIST/PS-1/2017/8), Council of Scientific, and Industrial Research Grant (Sanction no: 03(1409)/17/EMR-II) for the financial support required for this work. The national science and technology council of Taiwan under grant supported the thermal conductivity measurements no: NSTC-109-2112-M-006-013.
Funding Information:
Open access funding provided by Manipal Academy of Higher Education, Manipal. This study is supported by the DST-FIST Grant (SR/FIST/PS-1/2017/8), Council of Scientific, and Industrial Research Grant (Sanction no: 03(1409)/17/EMR-II). The national science and technology council of Taiwan under grant supported the thermal conductivity measurements no: NSTC-109-2112-M-006-013.
Publisher Copyright:
© 2023, The Author(s).
PY - 2023/3
Y1 - 2023/3
N2 - We herein report on compositing highly conductive GdH2 with BiCuSeO, with an aim to modulate the electronic transport and the nature of conductivity in the high-temperature regime. The incorporation of GdH2 as a minor matrix in BiCuSeO, as confirmed by structural studies, has considerably enhanced electrical conductivity in the system, thereby demonstrating the existence of thermal activation of the charge carriers. The effect of minor matrix is directly on the conversion of p-type to n-type conductivity in BiCuSeO system at near room temperature. Electronic quality factor (BE) has identified the ambiguities in the transport behaviour at near room temperature due to the addition of minor matrix. Enhancement in the power factor is seen due to GdH2, with a highest attained value of 221 μW m K−2 at 700 K for the sample with x = 11 wt%, which is nearly twice the value of pristine BiCuSeO. Highest ZT of 0.011 is obtained for the pristine BiCuSeO sample at 380 K.
AB - We herein report on compositing highly conductive GdH2 with BiCuSeO, with an aim to modulate the electronic transport and the nature of conductivity in the high-temperature regime. The incorporation of GdH2 as a minor matrix in BiCuSeO, as confirmed by structural studies, has considerably enhanced electrical conductivity in the system, thereby demonstrating the existence of thermal activation of the charge carriers. The effect of minor matrix is directly on the conversion of p-type to n-type conductivity in BiCuSeO system at near room temperature. Electronic quality factor (BE) has identified the ambiguities in the transport behaviour at near room temperature due to the addition of minor matrix. Enhancement in the power factor is seen due to GdH2, with a highest attained value of 221 μW m K−2 at 700 K for the sample with x = 11 wt%, which is nearly twice the value of pristine BiCuSeO. Highest ZT of 0.011 is obtained for the pristine BiCuSeO sample at 380 K.
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U2 - 10.1007/s10854-023-10188-1
DO - 10.1007/s10854-023-10188-1
M3 - Article
AN - SCOPUS:85151060117
SN - 0957-4522
VL - 34
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 8
M1 - 775
ER -