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Bismuth and tellurium co-doping: a route to improve thermoelectric efficiency in InSe polycrystals
Manasa R. Shankar
,
A. N. Prabhu
*
, Tulika Srivastava
*
Corresponding author for this work
Manipal Institute of Technology, Manipal
Research output
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Article
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peer-review
2
Citations (Scopus)
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INIS
efficiency
100%
bismuth
100%
polycrystals
100%
tellurium
100%
indium selenides
100%
concentration
50%
carriers
50%
applications
33%
cations
33%
anions
33%
doped materials
33%
temperature range
33%
power factor
33%
thermal conductivity
33%
performance
16%
reduction
16%
comparative evaluations
16%
transport
16%
atoms
16%
electrons
16%
phonons
16%
chalcogenides
16%
scattering
16%
thermoelectric materials
16%
Material Science
Bismuth
100%
Thermoelectrics
100%
Indium
100%
Polycrystal
100%
Carrier Concentration
50%
Thermal Conductivity
33%
Doping (Additives)
16%
Chalcogenides
16%
Thermoelectric Materials
16%
Chemical Engineering
Indium
100%
Thermal Conductivity
33%
Chalcogenides
16%