Abstract
Cadmium sulfide (CdS) thin films were deposited on glass substrate at room temperature by successive ionic layer adsorption and reaction method (SILAR). The deposition parameters such as rinsing time, rinsing cycle and concentration of precursor solution were varied during the preparation of the samples. The structural characterization and optical characterization were carried out. The deposited films by lower growth rate and lower precursor concentration solutions were having mixed hexagonal and cubic phases. Thickness dependence of the optical band gap energy was evaluated and it varies from 2.46 to 2.32 eV in the thickness range 38-330 nm.
| Original language | English |
|---|---|
| Pages (from-to) | 567-571 |
| Number of pages | 5 |
| Journal | Journal of Materials Science: Materials in Electronics |
| Volume | 24 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2013 |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Atomic and Molecular Physics, and Optics
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering