Characterization of p-CdTe/n-CdS hetero-junctions

M. G. Mahesha; Kasturi V. Bangera; G. K. Shivakumar

doi:10.1016/j.mssp.2009.07.014

Characterization of p-CdTe/n-CdS hetero-junctions

M. G. Mahesha, Kasturi V. Bangera, G. K. Shivakumar^*

^*Corresponding author for this work

Department of Physics, Manipal Institute of Technology, Manipal

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

Nano-crystalline CdTe/CdS thin film hetero-junctions have been grown on glass substrate by thermal evaporation technique. The growth conditions to get stoichiometric compound films have been optimized. The grown hetero-junctions have been characterized for their I-V characteristics. Analysis of I-V characteristics has been made to investigate the current conduction mechanism in p-CdTe/n-CdS hetero-junction. The band gap energy of cadmium telluride and cadmium sulfide films have been computed from the study of variation of resistance with temperature. Based on the study, band diagram for p-CdTe/n-CdS hetero-junction has been proposed.

Original language	English
Pages (from-to)	89-93
Number of pages	5
Journal	Materials Science in Semiconductor Processing
Volume	12
Issue number	3
DOIs	https://doi.org/10.1016/j.mssp.2009.07.014
Publication status	Published - 06-2009

All Science Journal Classification (ASJC) codes

Mechanical Engineering
Mechanics of Materials
General Materials Science
Condensed Matter Physics

Access to Document

10.1016/j.mssp.2009.07.014

Cite this

@article{4550d55a50bc43729e9078747efdc66b,

title = "Characterization of p-CdTe/n-CdS hetero-junctions",

abstract = "Nano-crystalline CdTe/CdS thin film hetero-junctions have been grown on glass substrate by thermal evaporation technique. The growth conditions to get stoichiometric compound films have been optimized. The grown hetero-junctions have been characterized for their I-V characteristics. Analysis of I-V characteristics has been made to investigate the current conduction mechanism in p-CdTe/n-CdS hetero-junction. The band gap energy of cadmium telluride and cadmium sulfide films have been computed from the study of variation of resistance with temperature. Based on the study, band diagram for p-CdTe/n-CdS hetero-junction has been proposed.",

author = "Mahesha, {M. G.} and Bangera, {Kasturi V.} and Shivakumar, {G. K.}",

year = "2009",

month = jun,

doi = "10.1016/j.mssp.2009.07.014",

language = "English",

volume = "12",

pages = "89--93",

journal = "Materials Science in Semiconductor Processing",

issn = "1369-8001",

publisher = "Elsevier Limited",

number = "3",

}

TY - JOUR

T1 - Characterization of p-CdTe/n-CdS hetero-junctions

AU - Mahesha, M. G.

AU - Bangera, Kasturi V.

AU - Shivakumar, G. K.

PY - 2009/6

Y1 - 2009/6

N2 - Nano-crystalline CdTe/CdS thin film hetero-junctions have been grown on glass substrate by thermal evaporation technique. The growth conditions to get stoichiometric compound films have been optimized. The grown hetero-junctions have been characterized for their I-V characteristics. Analysis of I-V characteristics has been made to investigate the current conduction mechanism in p-CdTe/n-CdS hetero-junction. The band gap energy of cadmium telluride and cadmium sulfide films have been computed from the study of variation of resistance with temperature. Based on the study, band diagram for p-CdTe/n-CdS hetero-junction has been proposed.

AB - Nano-crystalline CdTe/CdS thin film hetero-junctions have been grown on glass substrate by thermal evaporation technique. The growth conditions to get stoichiometric compound films have been optimized. The grown hetero-junctions have been characterized for their I-V characteristics. Analysis of I-V characteristics has been made to investigate the current conduction mechanism in p-CdTe/n-CdS hetero-junction. The band gap energy of cadmium telluride and cadmium sulfide films have been computed from the study of variation of resistance with temperature. Based on the study, band diagram for p-CdTe/n-CdS hetero-junction has been proposed.

UR - http://www.scopus.com/inward/record.url?scp=73049092760&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=73049092760&partnerID=8YFLogxK

U2 - 10.1016/j.mssp.2009.07.014

DO - 10.1016/j.mssp.2009.07.014

M3 - Article

AN - SCOPUS:73049092760

SN - 1369-8001

VL - 12

SP - 89

EP - 93

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

IS - 3

ER -

Characterization of p-CdTe/n-CdS hetero-junctions

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this