Abstract
Nano-crystalline CdTe/CdS thin film hetero-junctions have been grown on glass substrate by thermal evaporation technique. The growth conditions to get stoichiometric compound films have been optimized. The grown hetero-junctions have been characterized for their I-V characteristics. Analysis of I-V characteristics has been made to investigate the current conduction mechanism in p-CdTe/n-CdS hetero-junction. The band gap energy of cadmium telluride and cadmium sulfide films have been computed from the study of variation of resistance with temperature. Based on the study, band diagram for p-CdTe/n-CdS hetero-junction has been proposed.
| Original language | English |
|---|---|
| Pages (from-to) | 89-93 |
| Number of pages | 5 |
| Journal | Materials Science in Semiconductor Processing |
| Volume | 12 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 06-2009 |
All Science Journal Classification (ASJC) codes
- Mechanical Engineering
- Mechanics of Materials
- General Materials Science
- Condensed Matter Physics
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