Characterization of thermally evaporated copper selenide thin films for device applications

  • Sahana Nagappa Moger
  • , M. G. Mahesha*
  • *Corresponding author for this work

    Research output: Contribution to journalConference articlepeer-review

    7 Citations (Scopus)

    Abstract

    Copper Selenide thin films were grown by thermal evaporation method on glass substrate. The properties of the thin films were characterized by XRD, UV-Visible spectroscopy, SEM-EDS, and PL analysis. The uniformity and stoichiometry of the deposited films were confirmed by SEM-EDS analysis. The XRD results confirmed the cubic phase with prominent (1 1 1) orientation. The deposited films showed very low transmittance (∼20%) and direct band gap of about 2.35 eV. Further, PL spectra revealed the presence of defect states present in the films. The deposited films are p-type material with carrier density of 1.14 × 1016cm-3. Structural, spectroscopic, and electrical studies have confirmed the device quality of the grown films, which find potential application in the field of renewable energy.

    Original languageEnglish
    Pages (from-to)22-25
    Number of pages4
    JournalMaterials Today: Proceedings
    Volume55
    DOIs
    Publication statusPublished - 2022
    Event9th National Conference on Condensed Matter Physics and Applications, CMPA 2021 - Virtual, Online, India
    Duration: 16-09-202117-09-2021

    All Science Journal Classification (ASJC) codes

    • General Materials Science

    Fingerprint

    Dive into the research topics of 'Characterization of thermally evaporated copper selenide thin films for device applications'. Together they form a unique fingerprint.

    Cite this