Characterization of thermally evaporated copper selenide thin films for device applications

Sahana Nagappa Moger; M. G. Mahesha

doi:10.1016/j.matpr.2021.11.644

Characterization of thermally evaporated copper selenide thin films for device applications

Sahana Nagappa Moger
, M. G. Mahesha^*

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

7 Citations (Scopus)

Abstract

Copper Selenide thin films were grown by thermal evaporation method on glass substrate. The properties of the thin films were characterized by XRD, UV-Visible spectroscopy, SEM-EDS, and PL analysis. The uniformity and stoichiometry of the deposited films were confirmed by SEM-EDS analysis. The XRD results confirmed the cubic phase with prominent (1 1 1) orientation. The deposited films showed very low transmittance (∼20%) and direct band gap of about 2.35 eV. Further, PL spectra revealed the presence of defect states present in the films. The deposited films are p-type material with carrier density of 1.14 × 10¹⁶cm^-3. Structural, spectroscopic, and electrical studies have confirmed the device quality of the grown films, which find potential application in the field of renewable energy.

Original language	English
Pages (from-to)	22-25
Number of pages	4
Journal	Materials Today: Proceedings
Volume	55
DOIs	https://doi.org/10.1016/j.matpr.2021.11.644
Publication status	Published - 2022
Event	9th National Conference on Condensed Matter Physics and Applications, CMPA 2021 - Virtual, Online, India Duration: 16-09-2021 → 17-09-2021

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

All Science Journal Classification (ASJC) codes

General Materials Science

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10.1016/j.matpr.2021.11.644

Cite this

@article{82da872ee8dd4ea299e3c150a61b65f3,

title = "Characterization of thermally evaporated copper selenide thin films for device applications",

abstract = "Copper Selenide thin films were grown by thermal evaporation method on glass substrate. The properties of the thin films were characterized by XRD, UV-Visible spectroscopy, SEM-EDS, and PL analysis. The uniformity and stoichiometry of the deposited films were confirmed by SEM-EDS analysis. The XRD results confirmed the cubic phase with prominent (1 1 1) orientation. The deposited films showed very low transmittance (∼20\%) and direct band gap of about 2.35 eV. Further, PL spectra revealed the presence of defect states present in the films. The deposited films are p-type material with carrier density of 1.14 × 1016cm-3. Structural, spectroscopic, and electrical studies have confirmed the device quality of the grown films, which find potential application in the field of renewable energy.",

author = "\{Nagappa Moger\}, Sahana and Mahesha, \{M. G.\}",

note = "Funding Information: The authors are grateful to UGC DAE CSR, Indore, Govt. of India ( CSR–IC–MSRSR-11/CRS-219/2017–18/1300 ) for financial assistance. Publisher Copyright: {\textcopyright} 2022 Elsevier Ltd. All rights reserved.; 9th National Conference on Condensed Matter Physics and Applications, CMPA 2021 ; Conference date: 16-09-2021 Through 17-09-2021",

year = "2022",

doi = "10.1016/j.matpr.2021.11.644",

language = "English",

volume = "55",

pages = "22--25",

journal = "Materials Today: Proceedings",

issn = "2214-7853",

publisher = "Elsevier Ltd",

}

TY - JOUR

T1 - Characterization of thermally evaporated copper selenide thin films for device applications

AU - Nagappa Moger, Sahana

AU - Mahesha, M. G.

N1 - Funding Information: The authors are grateful to UGC DAE CSR, Indore, Govt. of India ( CSR–IC–MSRSR-11/CRS-219/2017–18/1300 ) for financial assistance. Publisher Copyright: © 2022 Elsevier Ltd. All rights reserved.

PY - 2022

Y1 - 2022

N2 - Copper Selenide thin films were grown by thermal evaporation method on glass substrate. The properties of the thin films were characterized by XRD, UV-Visible spectroscopy, SEM-EDS, and PL analysis. The uniformity and stoichiometry of the deposited films were confirmed by SEM-EDS analysis. The XRD results confirmed the cubic phase with prominent (1 1 1) orientation. The deposited films showed very low transmittance (∼20%) and direct band gap of about 2.35 eV. Further, PL spectra revealed the presence of defect states present in the films. The deposited films are p-type material with carrier density of 1.14 × 1016cm-3. Structural, spectroscopic, and electrical studies have confirmed the device quality of the grown films, which find potential application in the field of renewable energy.

AB - Copper Selenide thin films were grown by thermal evaporation method on glass substrate. The properties of the thin films were characterized by XRD, UV-Visible spectroscopy, SEM-EDS, and PL analysis. The uniformity and stoichiometry of the deposited films were confirmed by SEM-EDS analysis. The XRD results confirmed the cubic phase with prominent (1 1 1) orientation. The deposited films showed very low transmittance (∼20%) and direct band gap of about 2.35 eV. Further, PL spectra revealed the presence of defect states present in the films. The deposited films are p-type material with carrier density of 1.14 × 1016cm-3. Structural, spectroscopic, and electrical studies have confirmed the device quality of the grown films, which find potential application in the field of renewable energy.

UR - https://www.scopus.com/pages/publications/85126146656

UR - https://www.scopus.com/pages/publications/85126146656#tab=citedBy

U2 - 10.1016/j.matpr.2021.11.644

DO - 10.1016/j.matpr.2021.11.644

M3 - Conference article

AN - SCOPUS:85126146656

SN - 2214-7853

VL - 55

SP - 22

EP - 25

JO - Materials Today: Proceedings

JF - Materials Today: Proceedings

T2 - 9th National Conference on Condensed Matter Physics and Applications, CMPA 2021

Y2 - 16 September 2021 through 17 September 2021

ER -

Characterization of thermally evaporated copper selenide thin films for device applications

Abstract

UN SDGs

All Science Journal Classification (ASJC) codes

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