Characterization of thin film Al/p-CdTe schottky diode

M. G. Mahesha; V. B. Kasturi; G. K. Shivakumar

Characterization of thin film Al/p-CdTe schottky diode

M. G. Mahesha
, V. B. Kasturi
, G. K. Shivakumar

Research output: Contribution to journal › Article › peer-review

Abstract

A study has been made on the behavior of Al/p-CdTe thin film junction grown by thermal evaporation method. I-V characteristics show that the Al makes Schottky contact with p-CdTe. The variation of junction capacitance with frequency and voltage has been studied to evaluate the barrier height. The activation energy and band gap have been estimated by studying variation of resistivity with temperature. Using all these data, band diagram of Al/p-CdTe has been proposed.

Original language	English
Pages (from-to)	151-156
Number of pages	6
Journal	Turkish Journal of Physics
Volume	32
Issue number	3
Publication status	Published - 01-05-2008

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

Cite this

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title = "Characterization of thin film Al/p-CdTe schottky diode",

abstract = "A study has been made on the behavior of Al/p-CdTe thin film junction grown by thermal evaporation method. I-V characteristics show that the Al makes Schottky contact with p-CdTe. The variation of junction capacitance with frequency and voltage has been studied to evaluate the barrier height. The activation energy and band gap have been estimated by studying variation of resistivity with temperature. Using all these data, band diagram of Al/p-CdTe has been proposed.",

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year = "2008",

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AU - Mahesha, M. G.

AU - Kasturi, V. B.

AU - Shivakumar, G. K.

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Y1 - 2008/5/1

N2 - A study has been made on the behavior of Al/p-CdTe thin film junction grown by thermal evaporation method. I-V characteristics show that the Al makes Schottky contact with p-CdTe. The variation of junction capacitance with frequency and voltage has been studied to evaluate the barrier height. The activation energy and band gap have been estimated by studying variation of resistivity with temperature. Using all these data, band diagram of Al/p-CdTe has been proposed.

AB - A study has been made on the behavior of Al/p-CdTe thin film junction grown by thermal evaporation method. I-V characteristics show that the Al makes Schottky contact with p-CdTe. The variation of junction capacitance with frequency and voltage has been studied to evaluate the barrier height. The activation energy and band gap have been estimated by studying variation of resistivity with temperature. Using all these data, band diagram of Al/p-CdTe has been proposed.

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M3 - Article

AN - SCOPUS:45849136753

SN - 1300-0101

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EP - 156

JO - Turkish Journal of Physics

JF - Turkish Journal of Physics

IS - 3

ER -

Characterization of thin film Al/p-CdTe schottky diode

Abstract

All Science Journal Classification (ASJC) codes

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