CMOS compatible AlN thin films on Si for energy harvesting applications

Ashin Varghese Mathews, Sandeep, K. K. Nagaraja

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Aluminum Nitride (AlN) is a piezoelectric material that has recently gained attention for CMOS (complementary metal-oxide semiconductor) compatible MEMS devices. In this report we report on the growth of AlN deposited on glass and silicon (111) at room temperature (CMOS compatible) using reactive DC magnetron sputtering. Sputtering is done at a low sputtering power of 30?W with different gas flow rates to minimize the residual stresses. The variation of the film properties is studied in comparison with the change in the flow rate of gas. A distinct change in the orientation from the (100) to (101) plane is observed through XRD analysis. The surface morphology of deposited films has been analyzed using SEM and EDX analysis is done to confirm the composition of the films.

Original languageEnglish
Title of host publicationAIP Conference Proceedings
EditorsAjay Kumar Mishra, Mohit Tyagi, D. V. Udupa, Sanjeeb Kumar Rout
PublisherAmerican Institute of Physics Inc.
ISBN (Electronic)9780735447646
Publication statusPublished - 12-01-2024
Event66th DAE Solid State Physics Symposium, DAE-SSPS 2022 - Ranchi, India
Duration: 18-12-202222-12-2022

Publication series

NameAIP Conference Proceedings
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616


Conference66th DAE Solid State Physics Symposium, DAE-SSPS 2022

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy


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