CMOS-MEMS Nano Force Sensor with Sub-μm U-Channel Suspended Gate SOIFET

Pramod Martha; Naveen Kadayinti; V. Seena

doi:10.1109/APSCON56343.2023.10101320

CMOS-MEMS Nano Force Sensor with Sub-μm U-Channel Suspended Gate SOIFET

Pramod Martha^*
, Naveen Kadayinti
, V. Seena

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

This article presents a novel sub-μM U-channel suspended gate SOIFET (USG-SOIFET) based nano-force sensor. The pseudo short channel effect in suspended gate FET (SGFET) is discussed, and the channel length of USG-SOIFET is reduced to 0.95 μM with an air-gap of 200 nm. This helps in improving the sensitivity of USG-SOIFET and makes it a suitable candidate to detect forces in the nano-newton range. The gate is attached to the MEMS structure. A four L-shaped MEMS structure is designed with a mechanical sensitivity of 0.08 nm/nN and a resonant frequency of 3.8 kHz. The air-gap values for different forces are obtained from the finite element method (FEM) simulation of MEMS structure and used as input to TCAD for USG-SOIFET simulations to get the final sensor response. The area of the sensor is only (0.38 × 0.38) mm2 with a sensitivity of 0.425 μ A/nN at an operating voltage of 3 V. The detection range of the proposed sensor is 1 nN to 1μN, and the response is highly linear with a non-linearity of about 0.4 %.

Original language	English
Title of host publication	APSCON 2023 - IEEE Applied Sensing Conference, Symposium Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781665461634
DOIs	https://doi.org/10.1109/APSCON56343.2023.10101320
Publication status	Published - 2023
Event	2023 IEEE Applied Sensing Conference, APSCON 2023 - Bengaluru, India Duration: 23-01-2023 → 25-01-2023

Publication series

Name	APSCON 2023 - IEEE Applied Sensing Conference, Symposium Proceedings

Conference

Conference	2023 IEEE Applied Sensing Conference, APSCON 2023
Country/Territory	India
City	Bengaluru
Period	23-01-23 → 25-01-23

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Instrumentation

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10.1109/APSCON56343.2023.10101320

Cite this

Martha, P., Kadayinti, N., & Seena, V. (2023). CMOS-MEMS Nano Force Sensor with Sub-μm U-Channel Suspended Gate SOIFET. In APSCON 2023 - IEEE Applied Sensing Conference, Symposium Proceedings (APSCON 2023 - IEEE Applied Sensing Conference, Symposium Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/APSCON56343.2023.10101320

@inproceedings{95c02e4f7e9040e288a965759db9a4bf,

title = "CMOS-MEMS Nano Force Sensor with Sub-μm U-Channel Suspended Gate SOIFET",

abstract = "This article presents a novel sub-μM U-channel suspended gate SOIFET (USG-SOIFET) based nano-force sensor. The pseudo short channel effect in suspended gate FET (SGFET) is discussed, and the channel length of USG-SOIFET is reduced to 0.95 μM with an air-gap of 200 nm. This helps in improving the sensitivity of USG-SOIFET and makes it a suitable candidate to detect forces in the nano-newton range. The gate is attached to the MEMS structure. A four L-shaped MEMS structure is designed with a mechanical sensitivity of 0.08 nm/nN and a resonant frequency of 3.8 kHz. The air-gap values for different forces are obtained from the finite element method (FEM) simulation of MEMS structure and used as input to TCAD for USG-SOIFET simulations to get the final sensor response. The area of the sensor is only (0.38 × 0.38) mm2 with a sensitivity of 0.425 μ A/nN at an operating voltage of 3 V. The detection range of the proposed sensor is 1 nN to 1μN, and the response is highly linear with a non-linearity of about 0.4 \%.",

author = "Pramod Martha and Naveen Kadayinti and V. Seena",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 IEEE Applied Sensing Conference, APSCON 2023 ; Conference date: 23-01-2023 Through 25-01-2023",

year = "2023",

doi = "10.1109/APSCON56343.2023.10101320",

language = "English",

series = "APSCON 2023 - IEEE Applied Sensing Conference, Symposium Proceedings",

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}

Martha, P, Kadayinti, N & Seena, V 2023, CMOS-MEMS Nano Force Sensor with Sub-μm U-Channel Suspended Gate SOIFET. in APSCON 2023 - IEEE Applied Sensing Conference, Symposium Proceedings. APSCON 2023 - IEEE Applied Sensing Conference, Symposium Proceedings, Institute of Electrical and Electronics Engineers Inc., 2023 IEEE Applied Sensing Conference, APSCON 2023, Bengaluru, India, 23-01-23. https://doi.org/10.1109/APSCON56343.2023.10101320

CMOS-MEMS Nano Force Sensor with Sub-μm U-Channel Suspended Gate SOIFET. / Martha, Pramod; Kadayinti, Naveen; Seena, V.
APSCON 2023 - IEEE Applied Sensing Conference, Symposium Proceedings. Institute of Electrical and Electronics Engineers Inc., 2023. (APSCON 2023 - IEEE Applied Sensing Conference, Symposium Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - CMOS-MEMS Nano Force Sensor with Sub-μm U-Channel Suspended Gate SOIFET

AU - Martha, Pramod

AU - Kadayinti, Naveen

AU - Seena, V.

PY - 2023

Y1 - 2023

N2 - This article presents a novel sub-μM U-channel suspended gate SOIFET (USG-SOIFET) based nano-force sensor. The pseudo short channel effect in suspended gate FET (SGFET) is discussed, and the channel length of USG-SOIFET is reduced to 0.95 μM with an air-gap of 200 nm. This helps in improving the sensitivity of USG-SOIFET and makes it a suitable candidate to detect forces in the nano-newton range. The gate is attached to the MEMS structure. A four L-shaped MEMS structure is designed with a mechanical sensitivity of 0.08 nm/nN and a resonant frequency of 3.8 kHz. The air-gap values for different forces are obtained from the finite element method (FEM) simulation of MEMS structure and used as input to TCAD for USG-SOIFET simulations to get the final sensor response. The area of the sensor is only (0.38 × 0.38) mm2 with a sensitivity of 0.425 μ A/nN at an operating voltage of 3 V. The detection range of the proposed sensor is 1 nN to 1μN, and the response is highly linear with a non-linearity of about 0.4 %.

AB - This article presents a novel sub-μM U-channel suspended gate SOIFET (USG-SOIFET) based nano-force sensor. The pseudo short channel effect in suspended gate FET (SGFET) is discussed, and the channel length of USG-SOIFET is reduced to 0.95 μM with an air-gap of 200 nm. This helps in improving the sensitivity of USG-SOIFET and makes it a suitable candidate to detect forces in the nano-newton range. The gate is attached to the MEMS structure. A four L-shaped MEMS structure is designed with a mechanical sensitivity of 0.08 nm/nN and a resonant frequency of 3.8 kHz. The air-gap values for different forces are obtained from the finite element method (FEM) simulation of MEMS structure and used as input to TCAD for USG-SOIFET simulations to get the final sensor response. The area of the sensor is only (0.38 × 0.38) mm2 with a sensitivity of 0.425 μ A/nN at an operating voltage of 3 V. The detection range of the proposed sensor is 1 nN to 1μN, and the response is highly linear with a non-linearity of about 0.4 %.

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M3 - Conference contribution

AN - SCOPUS:85157970668

T3 - APSCON 2023 - IEEE Applied Sensing Conference, Symposium Proceedings

BT - APSCON 2023 - IEEE Applied Sensing Conference, Symposium Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2023 IEEE Applied Sensing Conference, APSCON 2023

Y2 - 23 January 2023 through 25 January 2023

ER -

CMOS-MEMS Nano Force Sensor with Sub-μm U-Channel Suspended Gate SOIFET

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