Common Source Amplifier and Ring Oscillator Circuit Performance Optimization Using Multi-Bridge Channel FETs

In this paper the DC, analog/RF device and circuit applications of nanosheet (NS) FET is performed. To enhance power performance co-optimization geometry parameters like NS width (NS_W) and NS thickness (NS_H) are varied for high performance (HP) and low power (LP) applications. A rise in 1.47x in I _ON and a rise of 5.8x in I _OFF is noticed with increase in NS_H due to enlarged effective width (W _eff). In addition, a rise of 3.8x in I _ON and a fall of 76.4% in I _OFF is noticed with higher NS_W. Larger the NS_W ensures better transconductance (g_m), transconductance generation factor (TGF), cut-off frequency (f _T), gain-band width product (GBW), transconductance frequency product (TFP), and intrinsic delay (τ). The optimized supply voltage (V _DD) for maximum voltage gain of common source (CS) amplifier and 3 stage ring oscillators (RO) with varied NS_W is performed. Moreover, the impact of number of stages (N) of 3 stage RO for better frequency of oscillations (f _OSC) is studied towards high frequency circuit applications.