Compact analytical model for graphene field effect transistor: Drift-diffusion approach

Abhishek Kumar Upadhyay; Siromani Balmukund Rahi; Billel Smaani; Ball Mukund Mani Tripathi; Neha Paras; Ribu Mathew; Seema Rajput; Ankur Beohar

doi:10.1201/9781032670270-5

Compact analytical model for graphene field effect transistor: Drift-diffusion approach

Abhishek Kumar Upadhyay
, Siromani Balmukund Rahi
, Billel Smaani
, Ball Mukund Mani Tripathi
, Neha Paras
, Ribu Mathew
, Seema Rajput
, Ankur Beohar

Manipal School of Information Sciences, Manipal

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Abstract

Graphene has ultra-high carrier mobility (77,000 cm²V⁻s⁻¹) and saturation velocity, which makes it compatible with high-speed circuit applications. This chapter provides a detailed report on several analytical modeling approaches for graphene-based FET devices, which include drift diffusion, gradual channel approximation, virtual source, and ballistic approaches. Device modeling plays an important role in predicting the device's performance and is used to reveal the physics behind it. In addition, the compact model of the device will be used in the development of electronic design automation (EDA) tools, which are used for the circuit simulation.

Original language	English
Title of host publication	Advanced MOS Devices and their Circuit Applications
Publisher	CRC Press
Pages	56-73
Number of pages	18
ISBN (Electronic)	9781003831129
ISBN (Print)	9781032392851
DOIs	https://doi.org/10.1201/9781032670270-5
Publication status	Published - 01-01-2024

All Science Journal Classification (ASJC) codes

General Engineering
General Materials Science

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10.1201/9781032670270-5

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abstract = "Graphene has ultra-high carrier mobility (77,000 cm2V−s−1) and saturation velocity, which makes it compatible with high-speed circuit applications. This chapter provides a detailed report on several analytical modeling approaches for graphene-based FET devices, which include drift diffusion, gradual channel approximation, virtual source, and ballistic approaches. Device modeling plays an important role in predicting the device's performance and is used to reveal the physics behind it. In addition, the compact model of the device will be used in the development of electronic design automation (EDA) tools, which are used for the circuit simulation.",

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AU - Smaani, Billel

AU - Mani Tripathi, Ball Mukund

AU - Paras, Neha

AU - Mathew, Ribu

AU - Rajput, Seema

AU - Beohar, Ankur

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Compact analytical model for graphene field effect transistor: Drift-diffusion approach

Abstract

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