Negative Capacitance Field Effect Transistors are well known for their superior performance over MOSFET and are a viable candidate to succeed the baseline FET in time ahead. We have studied the performance of 32 nm planar MOSFET with doped hafnium dioxide as a ferroelectric material. The functioning of the NCFET is entirely dependent on the equivalence between the ferroelectric and MOS capacitance. Our simulation results clearly indicated that the Sr doped HfO2 has close capacitance matching with MOS capacitance, when compared with other dopant material (Si, Al and Zr). This also reflects in the performance parameters (drain current and transconductance characteristics) of the device designed. Also, we have designed a resistive load inverter with doped hafnium dioxide, Sr doped among them has an edge over the other ferroelectric material in terms of noise margin and static power dissipation.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering