TY - GEN
T1 - Comparative Study of Selector Device Design for Sneak Current in 3D Crosspoint ReRAM
AU - Dilna, U.
AU - Prasad, S. N.
N1 - Publisher Copyright:
© 2020 IEEE.
PY - 2020/12/11
Y1 - 2020/12/11
N2 - Resistive Random Access Memory (ReRAM) is an emerging high density storage device in today's world. The crosspoint connection of the ReRAM cell will have the advantage of eliminating the expensive transistors in the design. But the challenge in the design is the selection of the selector device. A review of selector device design on 3D crosspoint ReRAM is presented in this article. The number of ReRAM devices are connected with the wordline and bitline in the crossbar array to have high density storage. This article illustrates the methods for the stacking of ReRAM memory cells and selector devices. The flow of sneak current and the formation of sneak path are discussed in the article. The sneak path will consume the storage space in the memory device unwantedly, so it has to be reduced for the efficient use of the storage cell. The review focuses on the reason for the design of selector device and the methods that are available to compensate for the sneak current problem in the crossbar ReRAM memory and to improve the endurance and resistance ratio of the device are also discussed.
AB - Resistive Random Access Memory (ReRAM) is an emerging high density storage device in today's world. The crosspoint connection of the ReRAM cell will have the advantage of eliminating the expensive transistors in the design. But the challenge in the design is the selection of the selector device. A review of selector device design on 3D crosspoint ReRAM is presented in this article. The number of ReRAM devices are connected with the wordline and bitline in the crossbar array to have high density storage. This article illustrates the methods for the stacking of ReRAM memory cells and selector devices. The flow of sneak current and the formation of sneak path are discussed in the article. The sneak path will consume the storage space in the memory device unwantedly, so it has to be reduced for the efficient use of the storage cell. The review focuses on the reason for the design of selector device and the methods that are available to compensate for the sneak current problem in the crossbar ReRAM memory and to improve the endurance and resistance ratio of the device are also discussed.
UR - https://www.scopus.com/pages/publications/85101664746
UR - https://www.scopus.com/pages/publications/85101664746#tab=citedBy
U2 - 10.1109/MPCIT51588.2020.9350434
DO - 10.1109/MPCIT51588.2020.9350434
M3 - Conference contribution
AN - SCOPUS:85101664746
T3 - MPCIT 2020 - Proceedings: IEEE 3rd International Conference on "Multimedia Processing, Communication and Information Technology"
SP - 138
EP - 145
BT - MPCIT 2020 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 3rd IEEE International Conference on Multimedia Processing, Communication and Information Technology, MPCIT 2020
Y2 - 11 December 2020 through 12 December 2020
ER -