Comparison of various heterostructure DD-IMPATT Diode at 300GHz frequency

This work investigates the potential of impact avalanche transit time (IMPATT) devices operating at 300 GHz atmospheric window frequency. The devices are based on several double drift (DD) heterostructure diodes, including GaN/4H-SiC, Si/4H-SiC, and Graphene/4H-SiC. The self-consistent drift-diffusion (SCDD) model, which is developed by the authors based on the space charge equation, current continuity and Poisson’s equation. The simulation result indicates that Si/4H-SiC hetero-structure (HS) IMPATT has better performance in terms of breakdown voltage, efficiency and RF power (178.4V, 23.7%,5.46 W) as compared to GaN /4H-SiC (139.3V, 15.6%, 3.74W) and Graphene/4H-SiC (124.0 V, 18.3 %, 2.98W). The negative conductance of HS-Si/4H-SiC IMPATT is lower (9.15×10⁶ S/m²) compared to Graphene/4HSiC and GaN /4H-SiC hetero-structure (1.035×10⁷ S/m² 1.03×10⁷S/m²⁾. The design results presented in this paper are highly optimized and can be utilized to achieve these diodes for millimeter-wave communication systems.