Complementary inverter circuits based on p-SnO2 and n-In 2O3 thin film transistors

Dhananjaya Dhananjay; Chih Wei Chu; Chun Wei Ou; Meng Chyi Wu; Zhong Yo Ho; Kuo Chuan Ho; Shih Wei Lee

doi:10.1063/1.2936275

Complementary inverter circuits based on p-SnO₂ and n-In ₂O₃ thin film transistors

Dhananjay, Chih Wei Chu, Chun Wei Ou, Meng Chyi Wu, Zhong Yo Ho, Kuo Chuan Ho, Shih Wei Lee

Department of Physics, Manipal Institute of Technology, Manipal

Research output: Contribution to journal › Article › peer-review

58 Citations (SciVal)

Abstract

Thin film transistors (TFTs) of indium oxide (In₂O₃) and tin oxide (SnO₂) were fabricated on SiO₂ gate dielectric using reactive evaporation process. Structural investigation of the films revealed that In₂O₃ films were polycrystalline in nature with preferred (222) orientation and SnO₂ films exhibited amorphous nature. The x-ray photoelectric spectroscopy measurements suggest that SnO₂ films were oxygen rich and presume mixed oxidation states of Sn, namely Sn²⁺ and Sn⁴⁺. While the In₂O ₃ based TFTs possess n-type channel conduction, SnO₂ based TFTs exhibited anomalous p-type conductivity. Integration of these n- and p-type devices resulted in complementary inverter with a gain of 11.

Original language	English
Article number	232103
Journal	Applied Physics Letters
Volume	92
Issue number	23
DOIs	https://doi.org/10.1063/1.2936275
Publication status	Published - 20-06-2008

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2936275

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title = "Complementary inverter circuits based on p-SnO2 and n-In 2O3 thin film transistors",

abstract = "Thin film transistors (TFTs) of indium oxide (In2O3) and tin oxide (SnO2) were fabricated on SiO2 gate dielectric using reactive evaporation process. Structural investigation of the films revealed that In2O3 films were polycrystalline in nature with preferred (222) orientation and SnO2 films exhibited amorphous nature. The x-ray photoelectric spectroscopy measurements suggest that SnO2 films were oxygen rich and presume mixed oxidation states of Sn, namely Sn2+ and Sn4+. While the In2O 3 based TFTs possess n-type channel conduction, SnO2 based TFTs exhibited anomalous p-type conductivity. Integration of these n- and p-type devices resulted in complementary inverter with a gain of 11.",

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T1 - Complementary inverter circuits based on p-SnO2 and n-In 2O3 thin film transistors

AU - Dhananjay, null

AU - Chu, Chih Wei

AU - Ou, Chun Wei

AU - Wu, Meng Chyi

AU - Ho, Zhong Yo

AU - Ho, Kuo Chuan

AU - Lee, Shih Wei

PY - 2008/6/20

Y1 - 2008/6/20

N2 - Thin film transistors (TFTs) of indium oxide (In2O3) and tin oxide (SnO2) were fabricated on SiO2 gate dielectric using reactive evaporation process. Structural investigation of the films revealed that In2O3 films were polycrystalline in nature with preferred (222) orientation and SnO2 films exhibited amorphous nature. The x-ray photoelectric spectroscopy measurements suggest that SnO2 films were oxygen rich and presume mixed oxidation states of Sn, namely Sn2+ and Sn4+. While the In2O 3 based TFTs possess n-type channel conduction, SnO2 based TFTs exhibited anomalous p-type conductivity. Integration of these n- and p-type devices resulted in complementary inverter with a gain of 11.

AB - Thin film transistors (TFTs) of indium oxide (In2O3) and tin oxide (SnO2) were fabricated on SiO2 gate dielectric using reactive evaporation process. Structural investigation of the films revealed that In2O3 films were polycrystalline in nature with preferred (222) orientation and SnO2 films exhibited amorphous nature. The x-ray photoelectric spectroscopy measurements suggest that SnO2 films were oxygen rich and presume mixed oxidation states of Sn, namely Sn2+ and Sn4+. While the In2O 3 based TFTs possess n-type channel conduction, SnO2 based TFTs exhibited anomalous p-type conductivity. Integration of these n- and p-type devices resulted in complementary inverter with a gain of 11.

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Complementary inverter circuits based on p-SnO₂ and n-In ₂O₃ thin film transistors

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