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Complementary inverter circuits based on p-SnO
2
and n-In
2
O
3
thin film transistors
Dhananjay
, Chih Wei Chu
*
, Chun Wei Ou
, Meng Chyi Wu
, Zhong Yo Ho
, Kuo Chuan Ho
, Shih Wei Lee
*
Corresponding author for this work
Research output
:
Contribution to journal
›
Article
›
peer-review
63
Citations (Scopus)
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2
and n-In
2
O
3
thin film transistors'. Together they form a unique fingerprint.
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INIS
thin films
100%
transistors
100%
inverters
100%
tin oxides
100%
films
66%
gain
16%
devices
16%
oxygen
16%
investigations
16%
evaporation
16%
spectroscopy
16%
x radiation
16%
orientation
16%
polycrystals
16%
dielectrics
16%
indium oxides
16%
oxidation state
16%
Material Science
Electronic Circuit
100%
Film
100%
Thin-Film Transistor
100%
Oxidation Reaction
25%
Indium
25%
Tin Oxide
25%
Device Type
25%
Oxide Compound
25%
Dielectric Material
25%
Engineering
Thin-Film Transistor
100%
Inverter
100%
Gate Dielectric
25%
Polycrystalline
25%
Silicon Dioxide
25%