Complementary Metal Oxide Semiconductor Circuit Realization of Inverse Chebyshev Low-Pass Filter of Order (1 + α)

This paper presents the CMOS circuit realization of a low-pass Inverse Chebyshev fractional-order filter (FOF) of order (1 + α) using the inverse-follow-the-leader feedback (IFLF) topology. A nonlinear least squares optimization routine is used to determine the coefficients of the fractional-order transfer function to approximate the stop-band characteristics. The Inverse Chebyshev FOF of orders 1.3, 1.6, and 1.9 using cross-coupled operational transconductance amplifier (OTA) was designed in united microelectronics corporation (UMC) 180 nm complementary metal–oxide–semiconductor process. The MATLAB and Cadence Spectre simulations are used to validate the implementation of the fractional-order filter of orders 1.3, 1.6 and 1.9. The dynamic range (DR) of the filter is found to be 83.04 dB, 86.13 dB, and 84.71 dB, respectively, for order of 1.3, 1.6, and 1.9. The simulation results such as magnitude response, transient plot, Monte Carlo, and PVT plots, have justified the design accuracy.