Comprehensive analysis of microstructural, optical and electrical properties of ZnS thin films deposited by cost effective SILAR technique

Pawan Kumar, Gowrish K. Rao

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

Cost effective SILAR technique was utilized to synthesis uniform ZnS thin films by varying solution molarity. The structural, composition, optical, and transport properties of zinc sulphide films synthesized were explored in detail. The properties of the films with different thickness were studied using, XRD, SEM-EDS, UV–visible spectroscopy, and I-V probe station. XRD analysis revealed the cubic structure of as prepared and heat treated ZnS films. The films comprised of moderate sized crystallites(15 nm). The films were well adherent and EDS analysis confirmed the marginal stoichiometry of the films. Significant optical absorption was seen in the near UV region. The films showed high absorption coefficient values (106 cm−1). The optical band gap of the as prepared and heat-treated films was found to be in the range 3.1 eV to 3.6 eV. The penetration depth showed the cut off wavelength in UV region. The electrical properties were studied using silver ohmic contacts. The resistivity of the films was in the range 102 Ω cm, and the carrier concentration was observed to be of the order of and 1014 cm3. The sufficiently thick ZnS thin films with high absorption coefficient can be used for UV photodetector applications.

Original languageEnglish
Pages (from-to)380-384
Number of pages5
JournalMaterials Today: Proceedings
Volume65
DOIs
Publication statusPublished - 01-2022

All Science Journal Classification (ASJC) codes

  • General Materials Science

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