Conduction mechanisms in vacuum deposited p-ZnTe/n-Si heterojunction diodes

K. Gowrish Rao; Kasturi V. Bangera; G. K. Shivakumar

doi:10.1063/1.3606001

Conduction mechanisms in vacuum deposited p-ZnTe/n-Si heterojunction diodes

K. Gowrish Rao, Kasturi V. Bangera, G. K. Shivakumar

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

p-ZnTe/n-Si heterojunction diodes were prepared by vacuum depositing ZnTe films on n-Si substrates. Detailed electrical characterization was performed to determine the conduction mechanisms operating in the diode. Important parameters such as ideality factor and barrier height were also determined.

Original language	English
Title of host publication	Solid State Physics - Proceedings of the 55th DAE Solid State Physics Symposium 2010
Pages	601-602
Number of pages	2
Volume	1349
Edition	PART A
DOIs	https://doi.org/10.1063/1.3606001
Publication status	Published - 12-09-2011
Event	55th DAE Solid State Physics Symposium 2010 - Manipal, India Duration: 26-12-2010 → 30-12-2010

Conference

Conference	55th DAE Solid State Physics Symposium 2010
Country/Territory	India
City	Manipal
Period	26-12-10 → 30-12-10

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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10.1063/1.3606001

Cite this

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title = "Conduction mechanisms in vacuum deposited p-ZnTe/n-Si heterojunction diodes",

abstract = "p-ZnTe/n-Si heterojunction diodes were prepared by vacuum depositing ZnTe films on n-Si substrates. Detailed electrical characterization was performed to determine the conduction mechanisms operating in the diode. Important parameters such as ideality factor and barrier height were also determined.",

author = "Rao, {K. Gowrish} and Bangera, {Kasturi V.} and Shivakumar, {G. K.}",

year = "2011",

month = sep,

day = "12",

doi = "10.1063/1.3606001",

language = "English",

isbn = "9780735409057",

volume = "1349",

pages = "601--602",

booktitle = "Solid State Physics - Proceedings of the 55th DAE Solid State Physics Symposium 2010",

edition = "PART A",

note = "55th DAE Solid State Physics Symposium 2010 ; Conference date: 26-12-2010 Through 30-12-2010",

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T1 - Conduction mechanisms in vacuum deposited p-ZnTe/n-Si heterojunction diodes

AU - Rao, K. Gowrish

AU - Bangera, Kasturi V.

AU - Shivakumar, G. K.

PY - 2011/9/12

Y1 - 2011/9/12

N2 - p-ZnTe/n-Si heterojunction diodes were prepared by vacuum depositing ZnTe films on n-Si substrates. Detailed electrical characterization was performed to determine the conduction mechanisms operating in the diode. Important parameters such as ideality factor and barrier height were also determined.

AB - p-ZnTe/n-Si heterojunction diodes were prepared by vacuum depositing ZnTe films on n-Si substrates. Detailed electrical characterization was performed to determine the conduction mechanisms operating in the diode. Important parameters such as ideality factor and barrier height were also determined.

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U2 - 10.1063/1.3606001

DO - 10.1063/1.3606001

M3 - Conference contribution

AN - SCOPUS:80052448309

SN - 9780735409057

VL - 1349

SP - 601

EP - 602

BT - Solid State Physics - Proceedings of the 55th DAE Solid State Physics Symposium 2010

T2 - 55th DAE Solid State Physics Symposium 2010

Y2 - 26 December 2010 through 30 December 2010

ER -

Conduction mechanisms in vacuum deposited p-ZnTe/n-Si heterojunction diodes

Abstract

Conference

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