Conduction mechanisms in vacuum deposited p-ZnTe/n-Si heterojunction diodes

K. Gowrish Rao*, Kasturi V. Bangera, G. K. Shivakumar

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

p-ZnTe/n-Si heterojunction diodes were prepared by vacuum depositing ZnTe films on n-Si substrates. Detailed electrical characterization was performed to determine the conduction mechanisms operating in the diode. Important parameters such as ideality factor and barrier height were also determined.

Original languageEnglish
Title of host publicationSolid State Physics - Proceedings of the 55th DAE Solid State Physics Symposium 2010
Pages601-602
Number of pages2
Volume1349
EditionPART A
DOIs
Publication statusPublished - 12-09-2011
Event55th DAE Solid State Physics Symposium 2010 - Manipal, India
Duration: 26-12-201030-12-2010

Publication series

NameAIP Conference Proceedings
NumberPART A
Volume1349
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

Conference55th DAE Solid State Physics Symposium 2010
Country/TerritoryIndia
CityManipal
Period26-12-1030-12-10

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy

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