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Correlation between structural and mechanical properties of silicon doped DLC thin films

  • Ranjan Kr Ghadai
  • , Soham Das
  • , Dhruva Kumar
  • , Subhash C. Mondal
  • , Bibhu P. Swain*
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Silicon doped diamond like carbon (Si-DLC) thin films were deposited on SiO2/Si substrates with different H2 flow rate. The deposited Si-DLC films were characterized by field emission scanning electron microscopy (FESEM), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and nanoindentation characterizations. The FESEM images reveal the smooth Si-DLC thin films at lower H2 flow rate, however, increased surface roughness with increasing H2 flow rate. The Raman spectroscopy of Si-DLC thin films confirmed carbon nanocluster decreasing from 60.4 to 49.3 nm with increasing of H2 flow rates. The Raman signature at 796, 968 and 1530 cm− 1 correspond to transverse optic (TO), longitudinal optic (LO) and Si attachment to graphitic carbon respectively in the Si-DLC thin films. The maximum hardness and Young's modulus were 17.95 GPa and 186.65 GPa for 70 sccm and 90 sccm H2 flow rate respectably. The XPS results reveal Si at.% decreased from 18.91 to 14.15 of the Si-DLC thin films within creased by H2 flow rate.

Original languageEnglish
Pages (from-to)25-32
Number of pages8
JournalDiamond and Related Materials
Volume82
DOIs
Publication statusPublished - 02-2018

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • General Chemistry
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

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