CuO/ZnO planar bilayer heterojunction grown by reactive dc magnetron sputtering

Chaya Ravi Gobbiner; A. V.Muhammed Ali; Dhananjaya Kekuda

doi:10.1007/s10854-015-3652-5

CuO/ZnO planar bilayer heterojunction grown by reactive dc magnetron sputtering

Chaya Ravi Gobbiner
, A. V.Muhammed Ali
, Dhananjaya Kekuda^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

In the present article, we have investigated the possibility of utilizing cupric oxide as the promising absorber layers for the construction of oxide solar cells. The effect of argon to oxygen ratio on the structural and optical properties of copper oxide thin films is described. From the optical characterization, it was evident that band gap energy can be tuned by varying the argon to oxygen ratio (Ar:O₂) during deposition. Zinc oxide thin films with high transmittance were utilized as n-type counterparts for the cupric oxide absorber layers. The device structure with the configuration glass/Cu/CuO/ZnO/Al was characterized through dark and illuminated current–voltage (I–V) characteristics. Ohm’s law prevailed in the low field regime and space charge limited conduction followed in the high field region as observed from dark I–V characteristics.

Original language	English
Pages (from-to)	9801-9807
Number of pages	7
Journal	Journal of Materials Science: Materials in Electronics
Volume	26
Issue number	12
DOIs	https://doi.org/10.1007/s10854-015-3652-5
Publication status	Published - 01-12-2015

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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Cite this

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title = "CuO/ZnO planar bilayer heterojunction grown by reactive dc magnetron sputtering",

abstract = "In the present article, we have investigated the possibility of utilizing cupric oxide as the promising absorber layers for the construction of oxide solar cells. The effect of argon to oxygen ratio on the structural and optical properties of copper oxide thin films is described. From the optical characterization, it was evident that band gap energy can be tuned by varying the argon to oxygen ratio (Ar:O2) during deposition. Zinc oxide thin films with high transmittance were utilized as n-type counterparts for the cupric oxide absorber layers. The device structure with the configuration glass/Cu/CuO/ZnO/Al was characterized through dark and illuminated current–voltage (I–V) characteristics. Ohm{\textquoteright}s law prevailed in the low field regime and space charge limited conduction followed in the high field region as observed from dark I–V characteristics.",

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AU - Gobbiner, Chaya Ravi

AU - Ali, A. V.Muhammed

AU - Kekuda, Dhananjaya

PY - 2015/12/1

Y1 - 2015/12/1

N2 - In the present article, we have investigated the possibility of utilizing cupric oxide as the promising absorber layers for the construction of oxide solar cells. The effect of argon to oxygen ratio on the structural and optical properties of copper oxide thin films is described. From the optical characterization, it was evident that band gap energy can be tuned by varying the argon to oxygen ratio (Ar:O2) during deposition. Zinc oxide thin films with high transmittance were utilized as n-type counterparts for the cupric oxide absorber layers. The device structure with the configuration glass/Cu/CuO/ZnO/Al was characterized through dark and illuminated current–voltage (I–V) characteristics. Ohm’s law prevailed in the low field regime and space charge limited conduction followed in the high field region as observed from dark I–V characteristics.

AB - In the present article, we have investigated the possibility of utilizing cupric oxide as the promising absorber layers for the construction of oxide solar cells. The effect of argon to oxygen ratio on the structural and optical properties of copper oxide thin films is described. From the optical characterization, it was evident that band gap energy can be tuned by varying the argon to oxygen ratio (Ar:O2) during deposition. Zinc oxide thin films with high transmittance were utilized as n-type counterparts for the cupric oxide absorber layers. The device structure with the configuration glass/Cu/CuO/ZnO/Al was characterized through dark and illuminated current–voltage (I–V) characteristics. Ohm’s law prevailed in the low field regime and space charge limited conduction followed in the high field region as observed from dark I–V characteristics.

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CuO/ZnO planar bilayer heterojunction grown by reactive dc magnetron sputtering

Abstract

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