dc and ac transport properties of Mn-doped ZnO thin films grown by pulsed laser ablation

Dhananjay, J. Nagaraju, S. B. Krupanidhi

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38 Citations (Scopus)


MnxZn1-xO (x = 0.20) thin films were deposited on Pt coated Si substrates using pulsed laser ablation technique. The structural characteristics of the films were investigated by X-ray diffraction (XRD), while the dielectric response of the films was studied as a function of frequency and ambient temperature by employing impedance spectroscopy. It was found that all the films deposited on Pt coated Si substrates had c-axis preferred orientation perpendicular to the substrate, with full width at half maximum (FWHM) of the (0 0 2) X-ray reflection line being less than 0.5°. The dc and ac electrical conductivity of Mn-doped ZnO films were investigated as a function of temperature. The ac conductivity, σac(ω), varies as σac(ω) = Aωs with s in the range 0.4-0.9. The complex impedance plot showed data points lying on a single semicircle, implying the response originated from a single capacitive element corresponding to the bulk grains. The value of the activation energy computed from the Arrhenius plot of both dc and ac conductivities with 1000/T were 0.2 eV suggesting hopping conduction mechanism. The optical properties of Zn0.8Mn0.2O thin films were studied in the wavelength range 300-900 nm. The data were analyzed in the light of the existing theories and reflected a Burstein-Moss shift in these films. The films show magnetic properties, which are best described by a Curie-Weiss type behavior.

Original languageEnglish
Pages (from-to)70-76
Number of pages7
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Issue number1-3
Publication statusPublished - 25-08-2006

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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