Defect density estimation in Nanocluster carbon thin films

Shounak De; B. S. Satyanarayana; Mohan Rao; V. H S Moorthy

Defect density estimation in Nanocluster carbon thin films

Shounak De, B. S. Satyanarayana, Mohan Rao, V. H S Moorthy

Research output: Contribution to journal › Article › peer-review

Abstract

Nanocluster carbon thin films were grown using the room temprature based cathodic arc process. These films are mixed phase material containing both sp² and sp³ bondings. Space-charge-limited-current conduction (SCLC) mechanism was investigated in the case of Nanocluster carbon thin films. The results were analyzed by assuming uniform density of traps near the Fermi level. The values of density of states at the Fermi level, g (E_f), have been obtained from the SCLC measurements ranges between 6 10¹⁷ cm^-3 eV^-1 to 8x10¹⁷ cm^-3 eV^-1.

Original language	English
Pages (from-to)	657-663
Number of pages	7
Journal	Romanian Reports of Physics
Volume	57
Issue number	3-4
Publication status	Published - 2012

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

Cite this

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title = "Defect density estimation in Nanocluster carbon thin films",

abstract = "Nanocluster carbon thin films were grown using the room temprature based cathodic arc process. These films are mixed phase material containing both sp2 and sp3 bondings. Space-charge-limited-current conduction (SCLC) mechanism was investigated in the case of Nanocluster carbon thin films. The results were analyzed by assuming uniform density of traps near the Fermi level. The values of density of states at the Fermi level, g (Ef), have been obtained from the SCLC measurements ranges between 6 1017 cm-3 eV-1 to 8x1017 cm-3 eV-1.",

author = "Shounak De and Satyanarayana, {B. S.} and Mohan Rao and Moorthy, {V. H S}",

year = "2012",

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AU - De, Shounak

AU - Satyanarayana, B. S.

AU - Rao, Mohan

AU - Moorthy, V. H S

PY - 2012

Y1 - 2012

N2 - Nanocluster carbon thin films were grown using the room temprature based cathodic arc process. These films are mixed phase material containing both sp2 and sp3 bondings. Space-charge-limited-current conduction (SCLC) mechanism was investigated in the case of Nanocluster carbon thin films. The results were analyzed by assuming uniform density of traps near the Fermi level. The values of density of states at the Fermi level, g (Ef), have been obtained from the SCLC measurements ranges between 6 1017 cm-3 eV-1 to 8x1017 cm-3 eV-1.

AB - Nanocluster carbon thin films were grown using the room temprature based cathodic arc process. These films are mixed phase material containing both sp2 and sp3 bondings. Space-charge-limited-current conduction (SCLC) mechanism was investigated in the case of Nanocluster carbon thin films. The results were analyzed by assuming uniform density of traps near the Fermi level. The values of density of states at the Fermi level, g (Ef), have been obtained from the SCLC measurements ranges between 6 1017 cm-3 eV-1 to 8x1017 cm-3 eV-1.

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IS - 3-4

ER -

Defect density estimation in Nanocluster carbon thin films

Abstract

All Science Journal Classification (ASJC) codes

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