TY - GEN
T1 - Demonstration of a Junctionless Negative Capacitance FinFET-based Hydrogen Gas Sensor
T2 - 7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023
AU - Gandhi, Navneet
AU - Jaisawal, Rajeewa Kumar
AU - Rathore, Sunil
AU - Kondekar, P. N.
AU - Banchhor, Shashank
AU - Bagga, Navjeet
N1 - Publisher Copyright:
© 2023 IEEE.
PY - 2023
Y1 - 2023
N2 - The process induced variations like random dopant fluctuation (RDF), interface trap charge (IFT), and work function variation (WFV) can significantly affect the reliability and aging of the device. In this paper, we proposed a novel Junctionless Negative Capacitance (JLNC) FinFET, realized as a hydrogen gas sensor, and investigated its reliability aspects in terms of threshold voltage (VTH) variations. Owing to inherent characteristics, the NC phenomenon is employed to obtain a high-sensitivity transistor. Using a well-calibrated TCAD setup, we explored the VTH variation due to: (i) the metal grain size; (ii) the gas pressure, (iii) the Si-SiO2 interface traps charges; (iv) the RDF; and (v) the ambient temperature. Finally, the device aging is evaluated, i.e., end-of-lifetime (EOL) defined as the shift of Vth by 50mV.
AB - The process induced variations like random dopant fluctuation (RDF), interface trap charge (IFT), and work function variation (WFV) can significantly affect the reliability and aging of the device. In this paper, we proposed a novel Junctionless Negative Capacitance (JLNC) FinFET, realized as a hydrogen gas sensor, and investigated its reliability aspects in terms of threshold voltage (VTH) variations. Owing to inherent characteristics, the NC phenomenon is employed to obtain a high-sensitivity transistor. Using a well-calibrated TCAD setup, we explored the VTH variation due to: (i) the metal grain size; (ii) the gas pressure, (iii) the Si-SiO2 interface traps charges; (iv) the RDF; and (v) the ambient temperature. Finally, the device aging is evaluated, i.e., end-of-lifetime (EOL) defined as the shift of Vth by 50mV.
UR - https://www.scopus.com/pages/publications/85158165446
UR - https://www.scopus.com/pages/publications/85158165446#tab=citedBy
U2 - 10.1109/EDTM55494.2023.10103028
DO - 10.1109/EDTM55494.2023.10103028
M3 - Conference contribution
AN - SCOPUS:85158165446
T3 - 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023
BT - 7th IEEE Electron Devices Technology and Manufacturing Conference
PB - Institute of Electrical and Electronics Engineers Inc.
Y2 - 7 March 2023 through 10 March 2023
ER -