TY - JOUR
T1 - Design and simulations of Ge2Sb2Te5 vertical photodetector for silicon photonic platform
AU - Srivastava, Vibhu
AU - Tolani, Manoj
AU - Sunny,
AU - Kumar, Rajesh
N1 - Funding Information:
Manuscript received September 13, 2017; revised November 9, 2017; accepted November 9, 2017. Date of publication November 17, 2017; date of current version December 21, 2017. This work was supported by the Science and Engineering Research Board through the Department of Science and Technology, Government of India, under the Early Career Research Award Scheme under Grant ECR/2016/001950 and Grant ECR/2016/001350. The associate editor coordinating the review of this paper and approving it for publication was Dr. Shyqyri Haxha. (Corresponding author: Sunny.) V. Srivastava, M. Tolani, and Sunny are with the Department of Electronics and Communication Engineering, Indian Institute of Information Technology, Allahabad, India (e-mail: [email protected]; [email protected]; [email protected]).
Publisher Copyright:
© 2017 IEEE.
PY - 2018/1/15
Y1 - 2018/1/15
N2 - Here, we report design and simulations of a vertical photodetector based on amorphous Ge2Sb2Te5 (a-GST) for silicon platform at telecommunication wavelength (1550 nm). In our investigations, it is found that a-GST on silicon platform can be used as a waveguide photodetector with good responsivity and low dark current. Optimization of the structure is done to improve absorption, photocurrent, and corresponding electrical current at cathode. Our investigations reveal that ∼150 nm is optimized thickness of a-GST material for high responsivity (∼48 A/W) when integrated on top of a single-mode silicon-on-insulator waveguide. This responsivity is comparable with existing avalanche photodiodes. With optimized dimensions, a good ratio of photocurrent to dark current is obtained. To the best of our knowledge, this is the first report on a-GST-based photodetector.
AB - Here, we report design and simulations of a vertical photodetector based on amorphous Ge2Sb2Te5 (a-GST) for silicon platform at telecommunication wavelength (1550 nm). In our investigations, it is found that a-GST on silicon platform can be used as a waveguide photodetector with good responsivity and low dark current. Optimization of the structure is done to improve absorption, photocurrent, and corresponding electrical current at cathode. Our investigations reveal that ∼150 nm is optimized thickness of a-GST material for high responsivity (∼48 A/W) when integrated on top of a single-mode silicon-on-insulator waveguide. This responsivity is comparable with existing avalanche photodiodes. With optimized dimensions, a good ratio of photocurrent to dark current is obtained. To the best of our knowledge, this is the first report on a-GST-based photodetector.
UR - https://www.scopus.com/pages/publications/85035746963
UR - https://www.scopus.com/pages/publications/85035746963#tab=citedBy
U2 - 10.1109/JSEN.2017.2774923
DO - 10.1109/JSEN.2017.2774923
M3 - Article
AN - SCOPUS:85035746963
SN - 1530-437X
VL - 18
SP - 540
EP - 546
JO - IEEE Sensors Journal
JF - IEEE Sensors Journal
IS - 2
ER -