TY - JOUR
T1 - Design of a novel non-volatile hybrid spintronic true random number generator
AU - Jape, Siddhant
AU - Joshi, Vinod Kumar
AU - Barla, Prashanth
N1 - Funding Information:
The authors acknowledge the Department of E & C, Manipal Institute of Technology, Manipal Academy of Higher Education, Manipal, for providing the Cadence tool and lab facility required to carry out this research work. They also acknowledge the open-access websites providing the STT-PMA-MTJ model library, Stanford CNFET model library, and NIST test suite.
Publisher Copyright:
© 2022 John Wiley & Sons, Ltd.
PY - 2022/5
Y1 - 2022/5
N2 - True random number generators (TRNGs) are mainly used in cryptographic applications for the generation of various keys. A standard CMOS-based TRNG utilizes physical phenomena such as thermal noise, metastability, and oscillator jitter to generate fully non-deterministic random outputs but has high power dissipation and a large overhead area. In this work, we develop a novel low power non-volatile TRNG circuit that utilizes the inherent stochastic switching nature of magnetic tunnel junction (MTJ) as a randomness source. Thanks to the capabilities of MTJ and carbon nanotube field-effect transistors (CNTFETs), the proposed TRNG circuit consumes low power when compared with conventional CMOS-based TRNGs. The reliability of the proposed circuit is checked by running the corner case tests that considers all the process and environmental variations. The quality of the output bitstream is evaluated by running the twelve statistical randomness tests by the U.S National Institute of Standards and Technology (NIST). The circuit passes all the tests, meaning the output bit-stream is truly random. The circuit is designed in such a way that, even if the power is turned off, the quality of the randomness is not affected. The proposed TRNG structure has a less complex design and generates truly random output.
AB - True random number generators (TRNGs) are mainly used in cryptographic applications for the generation of various keys. A standard CMOS-based TRNG utilizes physical phenomena such as thermal noise, metastability, and oscillator jitter to generate fully non-deterministic random outputs but has high power dissipation and a large overhead area. In this work, we develop a novel low power non-volatile TRNG circuit that utilizes the inherent stochastic switching nature of magnetic tunnel junction (MTJ) as a randomness source. Thanks to the capabilities of MTJ and carbon nanotube field-effect transistors (CNTFETs), the proposed TRNG circuit consumes low power when compared with conventional CMOS-based TRNGs. The reliability of the proposed circuit is checked by running the corner case tests that considers all the process and environmental variations. The quality of the output bitstream is evaluated by running the twelve statistical randomness tests by the U.S National Institute of Standards and Technology (NIST). The circuit passes all the tests, meaning the output bit-stream is truly random. The circuit is designed in such a way that, even if the power is turned off, the quality of the randomness is not affected. The proposed TRNG structure has a less complex design and generates truly random output.
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U2 - 10.1002/cta.3243
DO - 10.1002/cta.3243
M3 - Article
AN - SCOPUS:85124590023
SN - 0098-9886
VL - 50
SP - 1487
EP - 1501
JO - International Journal of Circuit Theory and Applications
JF - International Journal of Circuit Theory and Applications
IS - 5
ER -