INIS
devices
100%
detection
100%
thin films
100%
transistors
100%
interfaces
60%
air
40%
energy
40%
comparative evaluations
40%
electrical properties
40%
silicon carbides
40%
concentration
20%
receptors
20%
simulation
20%
electrons
20%
voltage
20%
electric fields
20%
chemical composition
20%
valence
20%
silicon nitrides
20%
Chemistry
Electrical Property
100%
Silicon Carbide
100%
Phase Composition
50%
Silicon
50%
Electric Field
50%
Intrathoracic
50%
Chemical Reaction
50%
Conduction Band
50%
Valence Band
50%
Drain Current
50%
Nitride
50%
Material Science
Silicon Carbide
100%
Thin-Film Transistor
100%
Indium Tin Oxide
50%
Silicon Nitride
50%
Phase Composition
50%
Chemical Engineering
Silicon Carbide
100%
Silicon Nitride
50%