TY - JOUR
T1 - Determination of density-of-states of nanocluster carbon thin films MIS structure using capacitancevoltage technique
AU - De, Shounak
AU - Gope, Jhuma
AU - Satyanarayana, B. S.
AU - Panwar, O. S.
AU - Rao, Mohan
PY - 2011/4/20
Y1 - 2011/4/20
N2 - Nanocluster carbon thin films (NC) were deposited at room temperature by cathodic arc process. These films were clustered, amorphous and disordered in nature which is verified using Raman spectroscopy. Density of defect states (DOS), which influences electronic and optical properties, were determined from the capacitancevoltage (CV) characteristic of Al/NC/c-Si metalinsulatorsemiconductor (MIS) structure near the Fermi level of undoped samples. Dielectric constant of the films was also estimated using the same technique. The DOS were found to be varying from 5.68 × 10 16 to 4.9 × 10 19 cm -3 . The dielectric constant varied between 2.76 to 11.8. © 2011 World Scientific Publishing Company.
AB - Nanocluster carbon thin films (NC) were deposited at room temperature by cathodic arc process. These films were clustered, amorphous and disordered in nature which is verified using Raman spectroscopy. Density of defect states (DOS), which influences electronic and optical properties, were determined from the capacitancevoltage (CV) characteristic of Al/NC/c-Si metalinsulatorsemiconductor (MIS) structure near the Fermi level of undoped samples. Dielectric constant of the films was also estimated using the same technique. The DOS were found to be varying from 5.68 × 10 16 to 4.9 × 10 19 cm -3 . The dielectric constant varied between 2.76 to 11.8. © 2011 World Scientific Publishing Company.
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U2 - 10.1142/S0217984911026152
DO - 10.1142/S0217984911026152
M3 - Article
AN - SCOPUS:79953806164
SN - 0217-9849
VL - 25
SP - 763
EP - 772
JO - Modern Physics Letters B
JF - Modern Physics Letters B
IS - 10
ER -