Development of GaAs/AlGaAs quantum well structures providing a resonant tunneling regime in an electric field of p-i-n junction

K. K. Nagaraja; M. P. Telenkov; I. P. Kazakov; S. A. Savinov; Yu A. Mityagin

doi:10.1016/j.matpr.2016.06.021

Development of GaAs/AlGaAs quantum well structures providing a resonant tunneling regime in an electric field of p-i-n junction

K. K. Nagaraja^*, M. P. Telenkov, I. P. Kazakov, S. A. Savinov, Yu A. Mityagin

^*Corresponding author for this work

Department of Physics, Manipal Institute of Technology, Manipal

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Herein, we present a quantum well (QW) structure design for the intrinsic region of p-i-n solar cells to extend the absorption of incident photon flux. The structure parameters to achieve suitable level positions for the suggested p-i-n junction have been calculated theoretically by solving the Schrödinger equation. A GaAs/Al_0.3Ga_0.7As triple quantum well with the theoretically calculated structure parameters has been grown by molecular beam epitaxy. The photoluminescence measurements on the fabricated structure show the emission from the corresponding QWs. Further experiments are underway to understand the possible tunneling of photo-generated carriers through the wells.

Original language	English
Pages (from-to)	2744-2747
Number of pages	4
Journal	Materials Today: Proceedings
Volume	3
Issue number	8
DOIs	https://doi.org/10.1016/j.matpr.2016.06.021
Publication status	Published - 01-01-2016

All Science Journal Classification (ASJC) codes

General Materials Science

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10.1016/j.matpr.2016.06.021

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title = "Development of GaAs/AlGaAs quantum well structures providing a resonant tunneling regime in an electric field of p-i-n junction",

abstract = "Herein, we present a quantum well (QW) structure design for the intrinsic region of p-i-n solar cells to extend the absorption of incident photon flux. The structure parameters to achieve suitable level positions for the suggested p-i-n junction have been calculated theoretically by solving the Schr{\"o}dinger equation. A GaAs/Al0.3Ga0.7As triple quantum well with the theoretically calculated structure parameters has been grown by molecular beam epitaxy. The photoluminescence measurements on the fabricated structure show the emission from the corresponding QWs. Further experiments are underway to understand the possible tunneling of photo-generated carriers through the wells.",

author = "Nagaraja, {K. K.} and Telenkov, {M. P.} and Kazakov, {I. P.} and Savinov, {S. A.} and Mityagin, {Yu A.}",

note = "Publisher Copyright: {\textcopyright} 2016 Elsevier Ltd.",

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T1 - Development of GaAs/AlGaAs quantum well structures providing a resonant tunneling regime in an electric field of p-i-n junction

AU - Nagaraja, K. K.

AU - Telenkov, M. P.

AU - Kazakov, I. P.

AU - Savinov, S. A.

AU - Mityagin, Yu A.

PY - 2016/1/1

Y1 - 2016/1/1

N2 - Herein, we present a quantum well (QW) structure design for the intrinsic region of p-i-n solar cells to extend the absorption of incident photon flux. The structure parameters to achieve suitable level positions for the suggested p-i-n junction have been calculated theoretically by solving the Schrödinger equation. A GaAs/Al0.3Ga0.7As triple quantum well with the theoretically calculated structure parameters has been grown by molecular beam epitaxy. The photoluminescence measurements on the fabricated structure show the emission from the corresponding QWs. Further experiments are underway to understand the possible tunneling of photo-generated carriers through the wells.

AB - Herein, we present a quantum well (QW) structure design for the intrinsic region of p-i-n solar cells to extend the absorption of incident photon flux. The structure parameters to achieve suitable level positions for the suggested p-i-n junction have been calculated theoretically by solving the Schrödinger equation. A GaAs/Al0.3Ga0.7As triple quantum well with the theoretically calculated structure parameters has been grown by molecular beam epitaxy. The photoluminescence measurements on the fabricated structure show the emission from the corresponding QWs. Further experiments are underway to understand the possible tunneling of photo-generated carriers through the wells.

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JO - Materials Today: Proceedings

JF - Materials Today: Proceedings

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ER -

Development of GaAs/AlGaAs quantum well structures providing a resonant tunneling regime in an electric field of p-i-n junction

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