Dielectric and piezoelectric studies of dysprosium-doped BZT–BCNT perovskite ceramic system for sensors and actuator applications

  • Koduri Ramam*
  • , Srivathsava Surabhi
  • , S. C. Gurumurthy
  • , M. P. Shilpa
  • , K. Bindu
  • , Ravikirana
  • , Shridhar Mundinamani
  • *Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    6 Citations (Scopus)

    Abstract

    Perovskite-structured Dy-doped BZT–BCNT system has been investigated with variation of Dy doping through the solid-state reaction method. X-ray diffraction (XRD) and microscopic studies confirm the results in the rhombohedral stoichiometry without any secondary phases and uniform grain growth, respectively. Tolerance factor and electronegativity also confirm the presence of Dy doping in BZT–BCNT ceramic system with a stable rhombohedral crystallinity forming vacancy sites for oxygen ions. Optimum piezoelectric (PE) properties in non-Pb PE ceramic systems obtained due to trivalent donor Dy doping at A-site and pentavalent donor Nb at B-site are possible members for actuator and energy harvesters. Dielectric and PE studies signifying the rhombohedral perovskite behavior of this lead-free ceramic system confess that the proposed investigation could yield further potential PE sensors and actuator applicative futuristic studies.

    Original languageEnglish
    Pages (from-to)18002-18011
    Number of pages10
    JournalJournal of Materials Science: Materials in Electronics
    Volume32
    Issue number13
    DOIs
    Publication statusPublished - 07-2021

    All Science Journal Classification (ASJC) codes

    • Electronic, Optical and Magnetic Materials
    • Atomic and Molecular Physics, and Optics
    • Condensed Matter Physics
    • Electrical and Electronic Engineering

    Fingerprint

    Dive into the research topics of 'Dielectric and piezoelectric studies of dysprosium-doped BZT–BCNT perovskite ceramic system for sensors and actuator applications'. Together they form a unique fingerprint.

    Cite this